Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

Lu Liu; Yuyin Xi; Shihyun Ahn; Fan Ren; Brent P. Gila; Stephen J. Pearton; Ivan I. Kravchenko

doi:10.1116/1.4891168

Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

Lu Liu, Yuyin Xi, Shihyun Ahn, Fan Ren, Brent P. Gila, Stephen J. Pearton, Ivan I. Kravchenko

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The effects of postprocess annealing on the gate leakage current and breakdown voltage characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The fabricated AlGaN/GaN HEMTs were postannealed at 250, 300, 350, 400, or 450°C under a nitrogen (N ₂) atmosphere by using rapid thermal annealing, and both direct current (dc) and pulsed measurements were performed to characterize the changes in device performance. The reverse gate leakage current (I_G) at V_G=-10V was reduced by one order of magnitude and the off-state drain breakdown voltage (V_off) increased by over three-fold after postprocess annealing at 450°C. The reverse gate leakage current was found to be independent of gate-to-drain potential after annealing. The gate pulse measurements revealed the activation of deep traps during the postannealing at elevated temperatures.

Original language	English
Article number	052201
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	32
Issue number	5
DOIs	https://doi.org/10.1116/1.4891168
State	Published - Sep 2014

Funding

Funders	Funder number
Oak Ridge National Laboratory
U.S. Department of Defense
U.S. Department of Energy

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10.1116/1.4891168

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Liu, L., Xi, Y., Ahn, S., Ren, F., Gila, B. P., Pearton, S. J., & Kravchenko, I. I. (2014). Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 32(5), Article 052201. https://doi.org/10.1116/1.4891168

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title = "Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing",

abstract = "The effects of postprocess annealing on the gate leakage current and breakdown voltage characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The fabricated AlGaN/GaN HEMTs were postannealed at 250, 300, 350, 400, or 450°C under a nitrogen (N 2) atmosphere by using rapid thermal annealing, and both direct current (dc) and pulsed measurements were performed to characterize the changes in device performance. The reverse gate leakage current (IG) at VG=-10V was reduced by one order of magnitude and the off-state drain breakdown voltage (Voff) increased by over three-fold after postprocess annealing at 450°C. The reverse gate leakage current was found to be independent of gate-to-drain potential after annealing. The gate pulse measurements revealed the activation of deep traps during the postannealing at elevated temperatures.",

author = "Lu Liu and Yuyin Xi and Shihyun Ahn and Fan Ren and Gila, {Brent P.} and Pearton, {Stephen J.} and Kravchenko, {Ivan I.}",

year = "2014",

month = sep,

doi = "10.1116/1.4891168",

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journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing. / Liu, Lu; Xi, Yuyin; Ahn, Shihyun et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 32, No. 5, 052201, 09.2014.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

AU - Liu, Lu

AU - Xi, Yuyin

AU - Ahn, Shihyun

AU - Ren, Fan

AU - Gila, Brent P.

AU - Pearton, Stephen J.

AU - Kravchenko, Ivan I.

PY - 2014/9

Y1 - 2014/9

N2 - The effects of postprocess annealing on the gate leakage current and breakdown voltage characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The fabricated AlGaN/GaN HEMTs were postannealed at 250, 300, 350, 400, or 450°C under a nitrogen (N 2) atmosphere by using rapid thermal annealing, and both direct current (dc) and pulsed measurements were performed to characterize the changes in device performance. The reverse gate leakage current (IG) at VG=-10V was reduced by one order of magnitude and the off-state drain breakdown voltage (Voff) increased by over three-fold after postprocess annealing at 450°C. The reverse gate leakage current was found to be independent of gate-to-drain potential after annealing. The gate pulse measurements revealed the activation of deep traps during the postannealing at elevated temperatures.

AB - The effects of postprocess annealing on the gate leakage current and breakdown voltage characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The fabricated AlGaN/GaN HEMTs were postannealed at 250, 300, 350, 400, or 450°C under a nitrogen (N 2) atmosphere by using rapid thermal annealing, and both direct current (dc) and pulsed measurements were performed to characterize the changes in device performance. The reverse gate leakage current (IG) at VG=-10V was reduced by one order of magnitude and the off-state drain breakdown voltage (Voff) increased by over three-fold after postprocess annealing at 450°C. The reverse gate leakage current was found to be independent of gate-to-drain potential after annealing. The gate pulse measurements revealed the activation of deep traps during the postannealing at elevated temperatures.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

M1 - 052201

ER -

Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

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