Abstract
The impacts of incorporation of Nion aberration correctors into the VG Microscopes HB501UX and HB603U scanning transmission electron microscopes (STEMS) at Oak Ridge National Laboratory (ORNL) are discussed. The present generation of aberration correctors, which correct all aberrations up to third order, are capable to offer sufficient sensitivity to image single atoms and sufficient depth sensitivity to locate individual atoms in three dimensions along with sub-Ångstrom resolution laterally, depth resolution of a few nanometers, and depth precision at the Ångstrom level. A Nion aberration corrector installed in the 300-kV HB603U enables the flat-phase area on the Ronchigram to be increased by more than a factor of two and sub-Ångstrom information transfer can be seen in the Fourier transform of the image intensity.
Original language | English |
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Title of host publication | Advances in IMAGING AND ELECTRON PHYSICS Aberration-Corrected Electron Microscopy |
Publisher | Academic Press Inc. |
Pages | 327-384 |
Number of pages | 58 |
ISBN (Print) | 9780123742209 |
DOIs | |
State | Published - 2008 |
Publication series
Name | Advances in Imaging and Electron Physics |
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Volume | 153 |
ISSN (Print) | 1076-5670 |
Funding
The authors thank their collaborators in the work reviewed here: P. D. Nellist, O. L. Krivanek, N. Dellby, M. F. Murfitt, Z. S. Szilagyi, Y. Peng, S. Travaglini, H. M. Christen, W. Tian, R. Jin, B. Sales, D. G. Mandrus, V. Peña, Z. Sefrioui, J. Santamaria, I. Arslan, N. D. Browning, J. P. Buban, D. P. Norton, S. Kumar, P. S. Hazzledine, S. F. Findlay, A. J. D'Alfonso, E. C. Cosgriff, L. J. Allen, R. F. Klie, M. Beleggia, A. Franceschetti, C. Y. Jooss, Y. Zhu, N. Shibata, T. R. Gosnell, G. S. Painter, P. F. Becher, R. L. Satet, M. J. Hoffmann, A. Nakamura, T. Yamamoto, Y. Ikuhara, T. Ben, D. L. Sales, J. Pizarro, P. L. Galindo, D. Fuster, Y. Gonzalez, L. Gonzalez, K. Sohlberg, S. W. Wang, M. V. Glazoff, S. N. Rashkeev, S. H. Overbury, G. M. Veith, W. H. Sides, and J. T. Luck. This work was supported by the Division of Materials Sciences and Engineering, USDOE, in part by the Laboratory Directed Research and Development Program of ORNL, and by appointments (K. van Benthem, A. Y. Borisevich, and M. P. Oxley) to the ORNL Postdoctoral Research Program administered jointly by ORNL and ORISE. Some of the instrumentation used in this research was provided as part of the TEAM project, funded by the Division of Scientific User Facilities, Office of Science, U.S. Department of Energy.