Chapter 9 Materials Applications of Aberration-Corrected Scanning Transmission Electron Microscopy

S. J. Pennycook, M. F. Chisholm, A. R. Lupini, M. Varela, K. van Benthem, A. Y. Borisevich, M. P. Oxley, W. Luo, S. T. Pantelides

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

26 Scopus citations

Abstract

The impacts of incorporation of Nion aberration correctors into the VG Microscopes HB501UX and HB603U scanning transmission electron microscopes (STEMS) at Oak Ridge National Laboratory (ORNL) are discussed. The present generation of aberration correctors, which correct all aberrations up to third order, are capable to offer sufficient sensitivity to image single atoms and sufficient depth sensitivity to locate individual atoms in three dimensions along with sub-Ångstrom resolution laterally, depth resolution of a few nanometers, and depth precision at the Ångstrom level. A Nion aberration corrector installed in the 300-kV HB603U enables the flat-phase area on the Ronchigram to be increased by more than a factor of two and sub-Ångstrom information transfer can be seen in the Fourier transform of the image intensity.

Original languageEnglish
Title of host publicationAdvances in IMAGING AND ELECTRON PHYSICS Aberration-Corrected Electron Microscopy
PublisherAcademic Press Inc.
Pages327-384
Number of pages58
ISBN (Print)9780123742209
DOIs
StatePublished - 2008

Publication series

NameAdvances in Imaging and Electron Physics
Volume153
ISSN (Print)1076-5670

Funding

The authors thank their collaborators in the work reviewed here: P. D. Nellist, O. L. Krivanek, N. Dellby, M. F. Murfitt, Z. S. Szilagyi, Y. Peng, S. Travaglini, H. M. Christen, W. Tian, R. Jin, B. Sales, D. G. Mandrus, V. Peña, Z. Sefrioui, J. Santamaria, I. Arslan, N. D. Browning, J. P. Buban, D. P. Norton, S. Kumar, P. S. Hazzledine, S. F. Findlay, A. J. D'Alfonso, E. C. Cosgriff, L. J. Allen, R. F. Klie, M. Beleggia, A. Franceschetti, C. Y. Jooss, Y. Zhu, N. Shibata, T. R. Gosnell, G. S. Painter, P. F. Becher, R. L. Satet, M. J. Hoffmann, A. Nakamura, T. Yamamoto, Y. Ikuhara, T. Ben, D. L. Sales, J. Pizarro, P. L. Galindo, D. Fuster, Y. Gonzalez, L. Gonzalez, K. Sohlberg, S. W. Wang, M. V. Glazoff, S. N. Rashkeev, S. H. Overbury, G. M. Veith, W. H. Sides, and J. T. Luck. This work was supported by the Division of Materials Sciences and Engineering, USDOE, in part by the Laboratory Directed Research and Development Program of ORNL, and by appointments (K. van Benthem, A. Y. Borisevich, and M. P. Oxley) to the ORNL Postdoctoral Research Program administered jointly by ORNL and ORISE. Some of the instrumentation used in this research was provided as part of the TEAM project, funded by the Division of Scientific User Facilities, Office of Science, U.S. Department of Energy.

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