Abstract
This article addresses the critical issue of real-time monitoring of on-state resistance (RDSON) of all power semiconductor devices within a three-phase inverter. An optimized on-state voltage (VDSON) measurement circuit and configuration for a multiphase converter architecture is proposed, designed to overcome the challenges posed by different characteristics and nonidealities of current and voltage sensor components. In addition to the hardware, the solution includes a data processing and qualification strategy that minimizes the impact of switching noise and processing circuitry nonidealities on RDSON calculation. The efficacy of the approach is demonstrated through experimental results from a three-phase inverter, which is designed with silicon carbide metal-oxide-semiconductor field-effect transistors. This work contributes a novel solution to the field, enhancing the reliability and efficiency of power semiconductor device monitoring.
| Original language | English |
|---|---|
| Pages (from-to) | 11677-11686 |
| Number of pages | 10 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 39 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2024 |
| Externally published | Yes |
Keywords
- ON-state resistance (R)
- Online in situ health monitoring
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