Abstract
This paper addresses the critical issue of real-time monitoring of on-state resistance (RDSON) monitoring of all power semiconductor devices within a three-phase inverter. An optimized on-state voltage (VDSON) measurement circuit and configuration for a multi-phase converter architecture is proposed, designed to overcome the challenges posed by different characteristics and non-idealities of current and voltage sensor components. In addition to the hardware, the solution includes a data processing and qualification strategy that minimizes the impact of switching noise and processing circuitry non-idealities on RDSON calculation. The efficacy of the approach is demonstrated through experimental results from a three-phase inverter, which is designed with Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). This work contributes a novel solution to the field, enhancing the reliability and efficiency of power semiconductor device monitoring.
Original language | English |
---|---|
Pages (from-to) | 1-10 |
Number of pages | 10 |
Journal | IEEE Transactions on Power Electronics |
DOIs | |
State | Accepted/In press - 2024 |
Externally published | Yes |
Keywords
- Inverters
- Monitoring
- MOSFET
- Noise
- On-state resistance (RDSON)
- Online in-situ health monitoring
- Power measurement
- Sensors
- Voltage measurement