Cathodoluminescence of laser AIIBVI heterostructures

A. S. Ivanov; V. I. Vasilev; I. V. Sedova; S. V. Sorokin; A. A. Sitnikova; S. G. Konnikov; T. B. Popova; M. V. Zamoryanskaya

doi:10.1134/S1063782607040239

Cathodoluminescence of laser A^IIB^VI heterostructures

A. S. Ivanov, V. I. Vasilev, I. V. Sedova, S. V. Sorokin, A. A. Sitnikova, S. G. Konnikov, T. B. Popova, M. V. Zamoryanskaya

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A Cathodoluminescence (CL) method has been used for studies of ZnSe-based heterostructures with a CdSe fractional-monolayer recombination region. Electron beams with energies of 1-25 keV provide the ability to analyze CL bands associated with different layers of the heterostructure and revealed on the CL spectrum at different electron-beam penetration depth. Comparative analysis of the CL bands both from the recombination region and the upper layers has been used to characterize the transport properties of the structure. The correlation between the density and size distribution of quantum dots and full width at half maximum and spectral position of the CL bands has been studied in detail.

Original language	English
Pages (from-to)	478-481
Number of pages	4
Journal	Semiconductors
Volume	41
Issue number	4
DOIs	https://doi.org/10.1134/S1063782607040239
State	Published - Apr 2007
Externally published	Yes

Funding

The work was partly supported by RFBR grant no. 05-02-16568a.

Funders	Funder number
Russian Foundation for Basic Research	05-02-16568a

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title = "Cathodoluminescence of laser AIIBVI heterostructures",

abstract = "A Cathodoluminescence (CL) method has been used for studies of ZnSe-based heterostructures with a CdSe fractional-monolayer recombination region. Electron beams with energies of 1-25 keV provide the ability to analyze CL bands associated with different layers of the heterostructure and revealed on the CL spectrum at different electron-beam penetration depth. Comparative analysis of the CL bands both from the recombination region and the upper layers has been used to characterize the transport properties of the structure. The correlation between the density and size distribution of quantum dots and full width at half maximum and spectral position of the CL bands has been studied in detail.",

author = "Ivanov, {A. S.} and Vasilev, {V. I.} and Sedova, {I. V.} and Sorokin, {S. V.} and Sitnikova, {A. A.} and Konnikov, {S. G.} and Popova, {T. B.} and Zamoryanskaya, {M. V.}",

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T1 - Cathodoluminescence of laser AIIBVI heterostructures

AU - Ivanov, A. S.

AU - Vasilev, V. I.

AU - Sedova, I. V.

AU - Sorokin, S. V.

AU - Sitnikova, A. A.

AU - Konnikov, S. G.

AU - Popova, T. B.

AU - Zamoryanskaya, M. V.

PY - 2007/4

Y1 - 2007/4

N2 - A Cathodoluminescence (CL) method has been used for studies of ZnSe-based heterostructures with a CdSe fractional-monolayer recombination region. Electron beams with energies of 1-25 keV provide the ability to analyze CL bands associated with different layers of the heterostructure and revealed on the CL spectrum at different electron-beam penetration depth. Comparative analysis of the CL bands both from the recombination region and the upper layers has been used to characterize the transport properties of the structure. The correlation between the density and size distribution of quantum dots and full width at half maximum and spectral position of the CL bands has been studied in detail.

AB - A Cathodoluminescence (CL) method has been used for studies of ZnSe-based heterostructures with a CdSe fractional-monolayer recombination region. Electron beams with energies of 1-25 keV provide the ability to analyze CL bands associated with different layers of the heterostructure and revealed on the CL spectrum at different electron-beam penetration depth. Comparative analysis of the CL bands both from the recombination region and the upper layers has been used to characterize the transport properties of the structure. The correlation between the density and size distribution of quantum dots and full width at half maximum and spectral position of the CL bands has been studied in detail.

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DO - 10.1134/S1063782607040239

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SP - 478

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JO - Semiconductors

JF - Semiconductors

IS - 4

ER -

Cathodoluminescence of laser A^IIB^VI heterostructures

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