Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes

Hongping Zhao; Jing Zhang; Takahiro Toma; Guangyu Liu; Jonathan D. Poplawsky; Volkmar Dierolf; Nelson Tansu

doi:10.1109/PHOTONICS.2010.5698996

Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes

Hongping Zhao, Jing Zhang, Takahiro Toma, Guangyu Liu, Jonathan D. Poplawsky, Volkmar Dierolf, Nelson Tansu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Growths of linearly-graded staggered InGaN quantum wells light-emitting diodes are performed, and the use of this novel active region leads to 2.5-3.5 times increase in output power.

Original language	English
Title of host publication	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages	532-533
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTONICS.2010.5698996
State	Published - 2010
Externally published	Yes
Event	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States Duration: Nov 7 2010 → Nov 11 2010

Publication series

Name	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Conference

Conference	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/Territory	United States
City	Denver, CO
Period	11/7/10 → 11/11/10

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10.1109/PHOTONICS.2010.5698996

Cite this

Zhao, H., Zhang, J., Toma, T., Liu, G., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2010). Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 532-533). Article 5698996 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698996

@inproceedings{06754d8a77a64504a78b7f86c30144ed,

title = "Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes",

abstract = "Growths of linearly-graded staggered InGaN quantum wells light-emitting diodes are performed, and the use of this novel active region leads to 2.5-3.5 times increase in output power.",

author = "Hongping Zhao and Jing Zhang and Takahiro Toma and Guangyu Liu and Poplawsky, {Jonathan D.} and Volkmar Dierolf and Nelson Tansu",

year = "2010",

doi = "10.1109/PHOTONICS.2010.5698996",

language = "English",

isbn = "9781424453689",

series = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

pages = "532--533",

booktitle = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

note = "23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 ; Conference date: 07-11-2010 Through 11-11-2010",

}

Zhao, H, Zhang, J, Toma, T, Liu, G, Poplawsky, JD, Dierolf, V & Tansu, N 2010, Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes. in 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010., 5698996, 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, pp. 532-533, 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, Denver, CO, United States, 11/7/10. https://doi.org/10.1109/PHOTONICS.2010.5698996

Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes. / Zhao, Hongping; Zhang, Jing; Toma, Takahiro et al.
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 532-533 5698996 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes

AU - Zhao, Hongping

AU - Zhang, Jing

AU - Toma, Takahiro

AU - Liu, Guangyu

AU - Poplawsky, Jonathan D.

AU - Dierolf, Volkmar

AU - Tansu, Nelson

PY - 2010

Y1 - 2010

N2 - Growths of linearly-graded staggered InGaN quantum wells light-emitting diodes are performed, and the use of this novel active region leads to 2.5-3.5 times increase in output power.

AB - Growths of linearly-graded staggered InGaN quantum wells light-emitting diodes are performed, and the use of this novel active region leads to 2.5-3.5 times increase in output power.

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U2 - 10.1109/PHOTONICS.2010.5698996

DO - 10.1109/PHOTONICS.2010.5698996

M3 - Conference contribution

AN - SCOPUS:79951902187

SN - 9781424453689

T3 - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

SP - 532

EP - 533

BT - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

T2 - 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Y2 - 7 November 2010 through 11 November 2010

ER -

Zhao H, Zhang J, Toma T, Liu G, Poplawsky JD, Dierolf V et al. Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 532-533. 5698996. (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). doi: 10.1109/PHOTONICS.2010.5698996

Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes

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