Carrier localization and the origin of luminescence in cubic InGaN alloys

P. R.C. Kent; Alex Zunger

doi:10.1063/1.1405003

Carrier localization and the origin of luminescence in cubic InGaN alloys

P. R.C. Kent, Alex Zunger

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

The electronic structure and optical properties of cubic (nonpiezoelectric) InGaN are investigated using large scale atomistic empirical pseudopotential calculations. We find that (i) strong hole localization exists even in the homogeneous random alloy, with a preferential localization along the [1,1,0] In-N-In-N-In chains, (ii) even modest sized (<50Å) indium rich quantum dots provide substantial quantum confinement and readily reduce emission energies relative to the random alloy by 200-300 meV, depending on size and composition, consistent with current photoluminescence, microscopy, and Raman data. The dual effects of alloy hole localization and localization of electrons and hole at intrinsic quantum dots are responsible for the emission characteristics of current grown cubic InGaN alloys.

Original language	English
Pages (from-to)	1977-1979
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	13
DOIs	https://doi.org/10.1063/1.1405003
State	Published - Sep 24 2001
Externally published	Yes

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10.1063/1.1405003

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title = "Carrier localization and the origin of luminescence in cubic InGaN alloys",

abstract = "The electronic structure and optical properties of cubic (nonpiezoelectric) InGaN are investigated using large scale atomistic empirical pseudopotential calculations. We find that (i) strong hole localization exists even in the homogeneous random alloy, with a preferential localization along the [1,1,0] In-N-In-N-In chains, (ii) even modest sized (<50{\AA}) indium rich quantum dots provide substantial quantum confinement and readily reduce emission energies relative to the random alloy by 200-300 meV, depending on size and composition, consistent with current photoluminescence, microscopy, and Raman data. The dual effects of alloy hole localization and localization of electrons and hole at intrinsic quantum dots are responsible for the emission characteristics of current grown cubic InGaN alloys.",

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N2 - The electronic structure and optical properties of cubic (nonpiezoelectric) InGaN are investigated using large scale atomistic empirical pseudopotential calculations. We find that (i) strong hole localization exists even in the homogeneous random alloy, with a preferential localization along the [1,1,0] In-N-In-N-In chains, (ii) even modest sized (<50Å) indium rich quantum dots provide substantial quantum confinement and readily reduce emission energies relative to the random alloy by 200-300 meV, depending on size and composition, consistent with current photoluminescence, microscopy, and Raman data. The dual effects of alloy hole localization and localization of electrons and hole at intrinsic quantum dots are responsible for the emission characteristics of current grown cubic InGaN alloys.

AB - The electronic structure and optical properties of cubic (nonpiezoelectric) InGaN are investigated using large scale atomistic empirical pseudopotential calculations. We find that (i) strong hole localization exists even in the homogeneous random alloy, with a preferential localization along the [1,1,0] In-N-In-N-In chains, (ii) even modest sized (<50Å) indium rich quantum dots provide substantial quantum confinement and readily reduce emission energies relative to the random alloy by 200-300 meV, depending on size and composition, consistent with current photoluminescence, microscopy, and Raman data. The dual effects of alloy hole localization and localization of electrons and hole at intrinsic quantum dots are responsible for the emission characteristics of current grown cubic InGaN alloys.

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VL - 79

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EP - 1979

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Carrier localization and the origin of luminescence in cubic InGaN alloys

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