Carrier concentration dependence of the electrical behaviors of ITO contacts on n-type ZnO

Sang Ho Kim; Dea Kue Hwang; Seong Ju Park; Tae Yeon Seong

doi:10.3938/jkps.54.740

Carrier concentration dependence of the electrical behaviors of ITO contacts on n-type ZnO

Sang Ho Kim, Dea Kue Hwang, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the carrier concentration dependence of the electrical characteristics of ITO Ohmic contacts to unintentionally doped n-ZnO (N _d = 1.79 × 10¹⁶ - 5.76 × 10¹⁸ cm^-3). For n-ZnO layers with carrier concentrations in excess of 8.04 × 10¹⁷ cm^-3, as-deposited ITO contacts produce good Ohmic behavior. However, as-deposited ITO contacts to n-ZnO with carrier concentrations less than ∼4 × 10¹⁷ cm^-3 yield non-Ohmic behaviors. We show that when annealed at 400 °C in a nitrogen ambient, the ITO contacts to ZnO (with carrier concentrations exceeding 4.08 × 10¹⁷ cm^-3) become Ohmic with a specific contact resistivity in the range of 8.76 × 10^-3 - 1.51 × 10 ^-4 Ωcm². Based on carrier transportation theory, we describe the carrier concentration and the annealing temperature dependence of the carrier transport mechanisms.

Original language	English
Pages (from-to)	740-743
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	54
Issue number	2
DOIs	https://doi.org/10.3938/jkps.54.740
State	Published - Feb 2009
Externally published	Yes

Keywords

Electronic transport
Indium tin oxide
Ohmic contact
Zinc oxide

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title = "Carrier concentration dependence of the electrical behaviors of ITO contacts on n-type ZnO",

abstract = "We report on the carrier concentration dependence of the electrical characteristics of ITO Ohmic contacts to unintentionally doped n-ZnO (N d = 1.79 × 1016 - 5.76 × 1018 cm-3). For n-ZnO layers with carrier concentrations in excess of 8.04 × 1017 cm-3, as-deposited ITO contacts produce good Ohmic behavior. However, as-deposited ITO contacts to n-ZnO with carrier concentrations less than ∼4 × 1017 cm-3 yield non-Ohmic behaviors. We show that when annealed at 400 °C in a nitrogen ambient, the ITO contacts to ZnO (with carrier concentrations exceeding 4.08 × 1017 cm-3) become Ohmic with a specific contact resistivity in the range of 8.76 × 10-3 - 1.51 × 10 -4 Ωcm2. Based on carrier transportation theory, we describe the carrier concentration and the annealing temperature dependence of the carrier transport mechanisms.",

keywords = "Electronic transport, Indium tin oxide, Ohmic contact, Zinc oxide",

author = "Kim, {Sang Ho} and Hwang, {Dea Kue} and Park, {Seong Ju} and Seong, {Tae Yeon}",

year = "2009",

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doi = "10.3938/jkps.54.740",

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volume = "54",

pages = "740--743",

journal = "Journal of the Korean Physical Society",

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T1 - Carrier concentration dependence of the electrical behaviors of ITO contacts on n-type ZnO

AU - Kim, Sang Ho

AU - Hwang, Dea Kue

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2009/2

Y1 - 2009/2

N2 - We report on the carrier concentration dependence of the electrical characteristics of ITO Ohmic contacts to unintentionally doped n-ZnO (N d = 1.79 × 1016 - 5.76 × 1018 cm-3). For n-ZnO layers with carrier concentrations in excess of 8.04 × 1017 cm-3, as-deposited ITO contacts produce good Ohmic behavior. However, as-deposited ITO contacts to n-ZnO with carrier concentrations less than ∼4 × 1017 cm-3 yield non-Ohmic behaviors. We show that when annealed at 400 °C in a nitrogen ambient, the ITO contacts to ZnO (with carrier concentrations exceeding 4.08 × 1017 cm-3) become Ohmic with a specific contact resistivity in the range of 8.76 × 10-3 - 1.51 × 10 -4 Ωcm2. Based on carrier transportation theory, we describe the carrier concentration and the annealing temperature dependence of the carrier transport mechanisms.

AB - We report on the carrier concentration dependence of the electrical characteristics of ITO Ohmic contacts to unintentionally doped n-ZnO (N d = 1.79 × 1016 - 5.76 × 1018 cm-3). For n-ZnO layers with carrier concentrations in excess of 8.04 × 1017 cm-3, as-deposited ITO contacts produce good Ohmic behavior. However, as-deposited ITO contacts to n-ZnO with carrier concentrations less than ∼4 × 1017 cm-3 yield non-Ohmic behaviors. We show that when annealed at 400 °C in a nitrogen ambient, the ITO contacts to ZnO (with carrier concentrations exceeding 4.08 × 1017 cm-3) become Ohmic with a specific contact resistivity in the range of 8.76 × 10-3 - 1.51 × 10 -4 Ωcm2. Based on carrier transportation theory, we describe the carrier concentration and the annealing temperature dependence of the carrier transport mechanisms.

KW - Electronic transport

KW - Indium tin oxide

KW - Ohmic contact

KW - Zinc oxide

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DO - 10.3938/jkps.54.740

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SN - 0374-4884

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2

ER -

Carrier concentration dependence of the electrical behaviors of ITO contacts on n-type ZnO

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Keywords

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