@inproceedings{b8cfaa034e654173ab0a5bd1af88e7b3,
title = "C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non-volatile memory devices",
abstract = "Electrical properties of Pt/SrBi2Ta2O9/CeO2/Si structure have been investigated for the ferroelectric gate of non-volatile memory. Memory windows of the ferroelectric gate are in the range of 1∼2V corresponding to the thickness of SrBi2Ta2O9 films at the applied voltage of 6V. This memory window is strongly dependent upon not the remanent polarization but the coercive field intensity applied to the SrBi2Ta2O9.",
author = "Lee, {Ho N.} and Shin, {Dong Suk} and Kim, {Yong Tae} and Choh, {Sung Ho}",
year = "1997",
doi = "10.1109/ESSDERC.1997.194539",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "756--759",
editor = "H. Grunbacher",
booktitle = "European Solid-State Device Research Conference",
note = "27th European Solid-State Device Research Conference, ESSDERC 1997 ; Conference date: 22-09-1997 Through 24-09-1997",
}