Abstract
The structures of bulk amorphous Zn41Sb59 and of GaSb alloys, produced by solid state transformation of the high pressure crystalline phase, were studied by neutron diffraction. The results are compared with the structure of crystalline compounds of the same composition. The structure of the amorphous GaSb is interpreted in terms of a distorted network of ZnS blende type. The local atomic coordination in the ZnSb alloy is basically tetrahedral but the tetrahedra are deformed and interlinked. A comparison with the structure of other amorphous semiconducting materials with tetrahedral bonding is also presented.
Original language | English |
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Pages (from-to) | 448-452 |
Number of pages | 5 |
Journal | Materials Science and Engineering: A |
Volume | 226-228 |
DOIs | |
State | Published - Jun 15 1997 |
Externally published | Yes |
Funding
The work was supported by the Grant No REP300 from the International Science Foundation, by the Russian Government through the Grants No 96-02-18545 (EGP) and 96-02-17486 (013) from the Russian Foundation for Fundamental Research and by the Royal Swedish Academy of Sciences under Grant No 1454.
Keywords
- Bulk amorphous semiconductors
- GaSb
- High pressure
- Neutron diffraction
- ZnSb