Broadband photocurrent spectroscopy and temperature dependence of band gap of few-layer indium selenide (InSe)

Prasanna D. Patil, Milinda Wasala, Sujoy Ghosh, Sidong Lei, Saikat Talapatra

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9 Scopus citations

Abstract

Understanding broadband photoconductive behaviour in two-dimensional layered materials is important in order to utilize them for a variety of opto-electronic applications. Results of photocurrent spectroscopy measurements performed on few-layer indium selenide (InSe) flakes are presented here. Temperature (T)-dependent (40 K < T < 300 K) photocurrent spectroscopy was performed in order to estimate the band gap energies Eg(T) of InSe at various temperatures. Measurements indicate that room temperature Eg value for InSe flake is ∼ 1.254 eV, which increased to a value of ∼ 1.275 eV at low temperatures. The estimation of Debye temperatures by analysing the observed experimental variation of Eg as a function of T using several theoretical models is presented and discussed.

Original languageEnglish
Pages (from-to)1029-1036
Number of pages8
JournalEmergent Materials
Volume4
Issue number4
DOIs
StatePublished - Aug 2021

Funding

This work was supported by the U.S. Army Research Office MURI grant #W911NF-11-1-0362. S.T. and P.D.P. received support from Indo-U.S. Virtual Networked Joint Center Project on “Light Induced Energy Technologies: Utilizing Promising 2D Nanomaterials (LITE UP 2D)” through the grant number IUSSTF/JC-071/2017. M.W. and P.D.P received the College of Science Dissertation Research Award and Graduate School Doctoral Fellowship respectively, awarded at Southern Illinois University Carbondale (SIUC).

Keywords

  • 2D semiconductors
  • Debye temperature
  • Indium selenide
  • InSe
  • Photoconductivity
  • Photocurrent spectroscopy

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