Broadband, High-Speed, and Extraordinarily Large All-Optical Switching with Yttrium-Doped Cadmium Oxide

  • Soham Saha
  • , Benjamin T. Diroll
  • , Joshua Shank
  • , Zhaxylyk Kudyshev
  • , Aveek Dutta
  • , Sarah Nahar Chowdhury
  • , Ting Shan Luk
  • , Salvatore Campione
  • , Richard D. Schaller
  • , Vladimir M. Shalaev
  • , Alexandra Boltasseva
  • , Michael G. Wood

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate significant epsilon-near-zero point shifts (11.3 μm to 5.3 μm), extraordinarily large (135%) optically-induced reflection modulation with picosecond response times, and carrier relaxation time-engineering in cadmium oxide via Yttrium doping.

Original languageEnglish
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580767
StatePublished - May 2020
Externally publishedYes
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: May 10 2020May 15 2020

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2020-May
ISSN (Print)1092-8081

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/TerritoryUnited States
CitySan Jose
Period05/10/2005/15/20

Funding

This research was supported by the Sandia National Laboratory Grant 1757154, U.S. Department of Energy Award DE-SC0017717, and Air Force Office of Scientific Research Grant FA9550-18-1-0002. Use of the Center for Nanoscale Materials was supported by the U.S. Department of Energy under Contract No. DE-AC02-06CH11357.

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