Abstract
We present experimental results on the locking of a 19-broad-area semiconductor laser array using a novel design of external cavity containing a lens array, projection optics, and a diffractive grating. All lasers are locked to single longitudinal mode. Significant improvement of the spatial profile of the entire laser array output beam has been observed. The center lobe of the far-field pattern of the laser array shows a single wavelength which can be tuned over a range more than 10 nm. The proposed technology can be applied to larger arrays including the stacked arrays.
| Original language | English |
|---|---|
| Pages (from-to) | 11-16 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5336 |
| DOIs | |
| State | Published - 2004 |
| Event | High-Power Diode Laser Technology and Applications II - San Jose, CA, United States Duration: Jan 26 2004 → Jan 27 2004 |
Keywords
- Broad area laser
- External cavity
- Grating
- High power
- Laser array
- Lens array
- Locking
- Optical feedback
- Semiconductor laser
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