Bridgman-stockbarger growth of binary alloyed semiconductor crystals with steady magnetic fields

X. Wang; N. Ma

doi:10.2514/1.15584

Bridgman-stockbarger growth of binary alloyed semiconductor crystals with steady magnetic fields

X. Wang, N. Ma

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Single crystals of alloyed compound semiconductor crystals such as gallium-aluminum-antimonide are needed for optoelectronic devices. These crystals are solidified from a solution of molten gallium-antimonide and aluminum-antimonide in a Bridgman-Stockbarger furnace. During the growth of alloyed semiconductor crystals, the solute's concentration is not small so that the density differences in the melt are very large. These compositional variations drive compositionally driven buoyant convection, or solutal convection, in addition to thermally driven buoyant convection. These buoyant convections drive convective species transport, which produce nonuniformities in the concentration in both the melt and the crystal. A numerical model is presented for the unsteady transport for the growth of alloyed semiconductor crystals during the vertical Bridgman-Stockbarger process with a steady axial magnetic field. Predictions of alloy concentration in the crystal and in the melt at several different stages during crystal growth are presented.

Original language	English
Pages (from-to)	313-319
Number of pages	7
Journal	Journal of Thermophysics and Heat Transfer
Volume	20
Issue number	2
DOIs	https://doi.org/10.2514/1.15584
State	Published - 2006
Externally published	Yes

Funding

This research was supported by the U.S. Air Force Office of Scientific Research under Grant FA9550-04-1-0249. The calculations were performed on the Cray X1 and the SGI Origin 3000 Complex provided by the Department of Defense High Performance Computing Modernization Program under Grant AFSNH2487 and on the IBM pSeries 690 provided by the National Computational Science Alliance under Grant DMR030015.

Funders	Funder number
Department of Defense High Performance Computing Modernization Program	AFSNH2487
National Computational Science Alliance	DMR030015
SGI Origin 3000
Air Force Office of Scientific Research	FA9550-04-1-0249
International Business Machines Corporation
Cray Incorporated

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abstract = "Single crystals of alloyed compound semiconductor crystals such as gallium-aluminum-antimonide are needed for optoelectronic devices. These crystals are solidified from a solution of molten gallium-antimonide and aluminum-antimonide in a Bridgman-Stockbarger furnace. During the growth of alloyed semiconductor crystals, the solute's concentration is not small so that the density differences in the melt are very large. These compositional variations drive compositionally driven buoyant convection, or solutal convection, in addition to thermally driven buoyant convection. These buoyant convections drive convective species transport, which produce nonuniformities in the concentration in both the melt and the crystal. A numerical model is presented for the unsteady transport for the growth of alloyed semiconductor crystals during the vertical Bridgman-Stockbarger process with a steady axial magnetic field. Predictions of alloy concentration in the crystal and in the melt at several different stages during crystal growth are presented.",

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AB - Single crystals of alloyed compound semiconductor crystals such as gallium-aluminum-antimonide are needed for optoelectronic devices. These crystals are solidified from a solution of molten gallium-antimonide and aluminum-antimonide in a Bridgman-Stockbarger furnace. During the growth of alloyed semiconductor crystals, the solute's concentration is not small so that the density differences in the melt are very large. These compositional variations drive compositionally driven buoyant convection, or solutal convection, in addition to thermally driven buoyant convection. These buoyant convections drive convective species transport, which produce nonuniformities in the concentration in both the melt and the crystal. A numerical model is presented for the unsteady transport for the growth of alloyed semiconductor crystals during the vertical Bridgman-Stockbarger process with a steady axial magnetic field. Predictions of alloy concentration in the crystal and in the melt at several different stages during crystal growth are presented.

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Bridgman-stockbarger growth of binary alloyed semiconductor crystals with steady magnetic fields

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