Abstract
The electronic structure of Ag films on Ge(III) was investigated focusing on the coupling between the Ag valence electrons and the Ge substrate states. The subband dispersion of a quantum well state, as it crosses the edge of the Ge confinement gap was mapped by angle-resolved photoemission. It was found that the quantum well peak splits into two, with an appearance that resembles a two-level anticrossing. It was also found that the Ag states within the Ge gap formed fully confined quantum well states, and the Ag states outside the Ge gap formed partially confined quantum well resonances.
| Original language | English |
|---|---|
| Article number | 216804 |
| Journal | Physical Review Letters |
| Volume | 93 |
| Issue number | 21 |
| DOIs | |
| State | Published - Nov 19 2004 |
Funding
This work is supported by the U.S. National Science Foundation (Grant No. DMR-02-03003). We acknowledge the Petroleum Research Fund, administered by the American Chemical Society, and the U.S. Department of Energy, Division of Materials Sciences (Grant No. DEFG02-91ER45439), for partial support of the synchrotron beam line operations and the central facilities of the Frederick Seitz Materials Research Laboratory. The Synchrotron Radiation Center of the University of Wisconsin–Madison is supported by the U.S. National Science Foundation (Grant No. DMR-00-84402).
| Funders | Funder number |
|---|---|
| Division of Materials Sciences | DEFG02-91ER45439, DMR-00-84402 |
| National Science Foundation | DMR-02-03003 |
| U.S. Department of Energy | |
| American Chemical Society | |
| American Chemical Society Petroleum Research Fund |