Boron ion implantation into silicon by use of the boron vacuum-arc plasma generator

This paper continues with presentation of experimental work pertaining to use of the boron vacuum arc (a.k.a. cathodic arc) plasma generator for boron doping in semiconductor silicon, particularly with a view to the problems associated with shallow junction doping Progress includes development of an excellent and novel macroparticle filter and subsequent ion implantations. An important perceived issue for vacuum arc generators is the production of copious macroparticles from cathode material. This issue is more important for cathodes of materials such as carbon or boron, for which the particles are not molten or plastic, but instead are elastic, and tend to recoil from baffles used in particle filters. The present design starts with two vanes of special orientation, so as to back reflect the particles, while steering the plasma between the vanes by use of high countercurrents in the vanes. Secondly, behind and surrounding the vanes is a complex system of baffles that has been designed by a computer-based strategy to ultimately trap the particles for multiple bounces. The statistical transmittance of particles is less than 5 per coulomb of boron ions transmitted at a position just a few centimeters outside the filter. This value appears adequate for the silicon wafer application, but improvement is easily visualized as wafers will be situated much further away when they are treated in systems. A total of 11 silicon samples, comprising an area of 250 cm², have been implanted. Particles were not detected. Sample biases ranged from 60 to 500 V. Boron doses ranged from 5 × 10 ¹⁴ to 5 × 10¹⁵/cm². Exposure times ranged from 20 to 200 ms for average transmitted boron current values of about 125 mA. SIMS concentration profiles from crystalline material are presented. The results appear broadly favorable in relation to competitive techniques and will be discussed. It is concluded that doubly charged boron ions are not present in the plume.