Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy

D. S. Lin; T. Miller; T. C. Chiang

doi:10.1103/PhysRevB.44.10719

Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy

D. S. Lin, T. Miller, T. C. Chiang

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Abstract

The core-level line shapes of Si(111)-(7×7), Si(100)-(2×1), and Ge(100)-(2×1) are examined with synchrotron-radiation photoemission both before and after Cs adsorption. The Cs-induced core-level shifts are determined. The results indicate that the chemisorption bond is partially ionic, and the Si or Ge surface atoms each have an extra charge of about 0.3 electron after Cs adsorption.

Original language	English
Pages (from-to)	10719-10723
Number of pages	5
Journal	Physical Review B
Volume	44
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.44.10719
State	Published - 1991
Externally published	Yes

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10.1103/PhysRevB.44.10719

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title = "Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy",

abstract = "The core-level line shapes of Si(111)-(7×7), Si(100)-(2×1), and Ge(100)-(2×1) are examined with synchrotron-radiation photoemission both before and after Cs adsorption. The Cs-induced core-level shifts are determined. The results indicate that the chemisorption bond is partially ionic, and the Si or Ge surface atoms each have an extra charge of about 0.3 electron after Cs adsorption.",

author = "Lin, {D. S.} and T. Miller and Chiang, {T. C.}",

year = "1991",

doi = "10.1103/PhysRevB.44.10719",

language = "English",

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pages = "10719--10723",

journal = "Physical Review B",

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publisher = "American Physical Society",

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T1 - Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy

AU - Lin, D. S.

AU - Miller, T.

AU - Chiang, T. C.

PY - 1991

Y1 - 1991

N2 - The core-level line shapes of Si(111)-(7×7), Si(100)-(2×1), and Ge(100)-(2×1) are examined with synchrotron-radiation photoemission both before and after Cs adsorption. The Cs-induced core-level shifts are determined. The results indicate that the chemisorption bond is partially ionic, and the Si or Ge surface atoms each have an extra charge of about 0.3 electron after Cs adsorption.

AB - The core-level line shapes of Si(111)-(7×7), Si(100)-(2×1), and Ge(100)-(2×1) are examined with synchrotron-radiation photoemission both before and after Cs adsorption. The Cs-induced core-level shifts are determined. The results indicate that the chemisorption bond is partially ionic, and the Si or Ge surface atoms each have an extra charge of about 0.3 electron after Cs adsorption.

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U2 - 10.1103/PhysRevB.44.10719

DO - 10.1103/PhysRevB.44.10719

M3 - Article

AN - SCOPUS:0012176637

SN - 0163-1829

VL - 44

SP - 10719

EP - 10723

JO - Physical Review B

JF - Physical Review B

IS - 19

ER -

Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy

Abstract

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