Abstract
The biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN and InAs and optical bowing of strained epitaxial InGaN alloys were discussed. The results were found to fit to a convenient-to-use polynomial and the fits provided in tabular form. The analysis showed that the epitaxial strain reduced the InGaN alloy bowing coefficient compared to relaxed bulk alloys.
| Original language | English |
|---|---|
| Pages (from-to) | 4377-4379 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 23 |
| DOIs | |
| State | Published - Dec 2 2002 |
| Externally published | Yes |