Abstract
The biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN and InAs and optical bowing of strained epitaxial InGaN alloys were discussed. The results were found to fit to a convenient-to-use polynomial and the fits provided in tabular form. The analysis showed that the epitaxial strain reduced the InGaN alloy bowing coefficient compared to relaxed bulk alloys.
Original language | English |
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Pages (from-to) | 4377-4379 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 23 |
DOIs | |
State | Published - Dec 2 2002 |
Externally published | Yes |