Bias dependent two-channel conduction in InAlN/AlN/GaN structures

J. H. Leach; X. Ni; X. Li; M. Wu; U. Özgür; H. Morko̧; L. Zhou; D. A. Cullen; D. J. Smith; H. Cheng; Ç Kurdak; J. R. Meyer; I. Vurgaftman

doi:10.1063/1.3330627

Bias dependent two-channel conduction in InAlN/AlN/GaN structures

J. H. Leach, X. Ni, X. Li, M. Wu, U. Özgür, H. Morko̧, L. Zhou, D. A. Cullen, D. J. Smith, H. Cheng, Ç Kurdak, J. R. Meyer, I. Vurgaftman

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14 Scopus citations

Abstract

Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as a second conduction channel with a carrier density dependent upon polarization charges and lattice strain as well as the surface potential. The effect of an additional GaN spacer layer in InAlN/AlN/GaN structures is assessed using simulations, electron-microscopy observations, magnetoconductivity measurements with gated Hall bar samples, and with quantitative mobility spectrum analysis. We propose a possible formation mechanism for the parasitic layer, and note that although the additional unintended layer may have beneficial aspects, we discuss a strategy to prevent its occurrence.

Original language	English
Article number	083706
Journal	Journal of Applied Physics
Volume	107
Issue number	8
DOIs	https://doi.org/10.1063/1.3330627
State	Published - Apr 15 2010
Externally published	Yes

Funding

This work was supported by the Air Force Office of Scientific Research (Program monitor: Dr. Kitt Reinhardt) and Wright Patterson Air Force Base (Program monitor: Dr. Chris Bozada). The work at UM was supported by the NSF through Grant No. DMR-0606039. We also acknowledge use of facilities at the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

Funders	Funder number
Wright Patterson Air Force Base
National Science Foundation	DMR-0606039
Air Force Office of Scientific Research

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title = "Bias dependent two-channel conduction in InAlN/AlN/GaN structures",

abstract = "Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as a second conduction channel with a carrier density dependent upon polarization charges and lattice strain as well as the surface potential. The effect of an additional GaN spacer layer in InAlN/AlN/GaN structures is assessed using simulations, electron-microscopy observations, magnetoconductivity measurements with gated Hall bar samples, and with quantitative mobility spectrum analysis. We propose a possible formation mechanism for the parasitic layer, and note that although the additional unintended layer may have beneficial aspects, we discuss a strategy to prevent its occurrence.",

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AU - Leach, J. H.

AU - Ni, X.

AU - Li, X.

AU - Wu, M.

AU - Özgür, U.

AU - Morko̧, H.

AU - Zhou, L.

AU - Cullen, D. A.

AU - Smith, D. J.

AU - Cheng, H.

AU - Kurdak, Ç

AU - Meyer, J. R.

AU - Vurgaftman, I.

PY - 2010/4/15

Y1 - 2010/4/15

N2 - Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as a second conduction channel with a carrier density dependent upon polarization charges and lattice strain as well as the surface potential. The effect of an additional GaN spacer layer in InAlN/AlN/GaN structures is assessed using simulations, electron-microscopy observations, magnetoconductivity measurements with gated Hall bar samples, and with quantitative mobility spectrum analysis. We propose a possible formation mechanism for the parasitic layer, and note that although the additional unintended layer may have beneficial aspects, we discuss a strategy to prevent its occurrence.

AB - Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as a second conduction channel with a carrier density dependent upon polarization charges and lattice strain as well as the surface potential. The effect of an additional GaN spacer layer in InAlN/AlN/GaN structures is assessed using simulations, electron-microscopy observations, magnetoconductivity measurements with gated Hall bar samples, and with quantitative mobility spectrum analysis. We propose a possible formation mechanism for the parasitic layer, and note that although the additional unintended layer may have beneficial aspects, we discuss a strategy to prevent its occurrence.

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U2 - 10.1063/1.3330627

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Bias dependent two-channel conduction in InAlN/AlN/GaN structures

Abstract

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