Bias-dependent displacement damage effects in a silicon avalanche photodiode

Robert M. Zedric; Sunil S. Chirayath; Craig M. Marianno; Yacouba Diawara; Natko Skukan

doi:10.1016/j.nimb.2021.09.013

Bias-dependent displacement damage effects in a silicon avalanche photodiode

Robert M. Zedric, Sunil S. Chirayath, Craig M. Marianno, Yacouba Diawara, Natko Skukan

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3 Scopus citations

Abstract

Radiation effects studies on a commercial beveled-edge avalanche photodiode (APD) showed that applying reverse bias to the device during irradiation enhanced the severity of apparent damage. Proton microbeam irradiations were made using a proton beam energy of 2 MeV and fluence ranging from 2.0 × 10¹⁰ to 5.1 × 10¹² cm⁻². Charge collection measurements using the ion beam induced charge (IBIC) technique showed that relative losses increased by up to an order of magnitude when the reverse bias applied during irradiation increased from 50 to 1500 V. The presence of reverse bias also led to equivalent losses in charge collection that would only be seen in irradiations with an order of magnitude higher fluence in unbiased APDs. The results demonstrate that bias-enhanced irradiation damage is insufficiently understood and must be accounted for in characterizations of radiation effects.

Original language	English
Pages (from-to)	42-45
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	507
DOIs	https://doi.org/10.1016/j.nimb.2021.09.013
State	Published - Nov 15 2021

Funding

This research was performed under appointment to the Nuclear Nonproliferation International Safeguards Fellowship Program sponsored by the Department of Energy, National Nuclear Security Administration’s Office of International Nuclear Safeguards (NA-241). It has also been partially conducted and supported by the International Atomic Energy Agency, Nuclear Science and Instrumentation Laboratory, Physics Section. Special thanks to Milko Jakšić at the Ruđer Bošković Institute for support and guidance during the experiments. This research was performed under appointment to the Nuclear Nonproliferation International Safeguards Fellowship Program sponsored by the Department of Energy, National Nuclear Security Administration's Office of International Nuclear Safeguards (NA-241). It has also been partially conducted and supported by the International Atomic Energy Agency, Nuclear Science and Instrumentation Laboratory, Physics Section. Special thanks to Milko Jak?i? at the Ru?er Bo?kovi? Institute for support and guidance during the experiments.

Keywords

Avalanche photodiode
Bias effects
Displacement Damage
IBIC

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title = "Bias-dependent displacement damage effects in a silicon avalanche photodiode",

abstract = "Radiation effects studies on a commercial beveled-edge avalanche photodiode (APD) showed that applying reverse bias to the device during irradiation enhanced the severity of apparent damage. Proton microbeam irradiations were made using a proton beam energy of 2 MeV and fluence ranging from 2.0 × 1010 to 5.1 × 1012 cm−2. Charge collection measurements using the ion beam induced charge (IBIC) technique showed that relative losses increased by up to an order of magnitude when the reverse bias applied during irradiation increased from 50 to 1500 V. The presence of reverse bias also led to equivalent losses in charge collection that would only be seen in irradiations with an order of magnitude higher fluence in unbiased APDs. The results demonstrate that bias-enhanced irradiation damage is insufficiently understood and must be accounted for in characterizations of radiation effects.",

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AU - Zedric, Robert M.

AU - Chirayath, Sunil S.

AU - Marianno, Craig M.

AU - Diawara, Yacouba

AU - Skukan, Natko

PY - 2021/11/15

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AB - Radiation effects studies on a commercial beveled-edge avalanche photodiode (APD) showed that applying reverse bias to the device during irradiation enhanced the severity of apparent damage. Proton microbeam irradiations were made using a proton beam energy of 2 MeV and fluence ranging from 2.0 × 1010 to 5.1 × 1012 cm−2. Charge collection measurements using the ion beam induced charge (IBIC) technique showed that relative losses increased by up to an order of magnitude when the reverse bias applied during irradiation increased from 50 to 1500 V. The presence of reverse bias also led to equivalent losses in charge collection that would only be seen in irradiations with an order of magnitude higher fluence in unbiased APDs. The results demonstrate that bias-enhanced irradiation damage is insufficiently understood and must be accounted for in characterizations of radiation effects.

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ER -

Bias-dependent displacement damage effects in a silicon avalanche photodiode

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