Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films

Francesco Lavini, Nan Yang, Rama K. Vasudevan, E. Strelcov, S. Jesse, M. B. Okatan, I. Kravchenko, Daniele Di Castro, Sergei V. Kalinin, Giuseppe Balestrino, Carmela Aruta, Vittorio Foglietti

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Scanning probe bias techniques have been used as a method to locally dope thin epitaxial films of La2CuO4 (LCO) fabricated by pulsed laser deposition. The local electrochemical oxidation of LCO very efficiently introduces interstitial oxygen defects in the thin film. Details on the influence of the tip voltage bias and environmental conditions on the surface morphology have been investigated. The results show that a local uptake of oxygen occurs in the oxidized films.

Original languageEnglish
Article number325302
JournalNanotechnology
Volume26
Issue number32
DOIs
StatePublished - Aug 14 2015

Bibliographical note

Publisher Copyright:
© 2015 IOP Publishing Ltd.

Keywords

  • AFM lithography
  • surface electrochemical processes
  • tip-induced local oxidation

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