(BaxSr1-x)Ti1+yO3+z interface contamination and its effect on electrical properties

Jaemo Im; S. K. Streiffer; Orlando Auciello; Alan R. Krauss

doi:10.1063/1.1318730

(Ba_xSr_1-x)Ti_1+yO_3+z interface contamination and its effect on electrical properties

Jaemo Im, S. K. Streiffer, Orlando Auciello, Alan R. Krauss

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Surface contamination and cleaning processes of (Ba_xSr_-x)Ti_1+yO_3+z(BST) and Pt films were investigated using in situ, real-time mass spectroscopy of recoiled ions (MSRI). MSRI analysis revealed that BST film surfaces exposed to atmospheric ambient are contaminated with carbon and hydrogen containing species, which could be removed by thermal decomposition/desorption in an oxygen ambient. Cleaning of the BST surface was accomplished by annealing at 500°C in ≥1 mTorr O₂, resulting in complete elimination of these species. Similar contamination on Pt film surfaces could be eliminated with only 200°C annealing in 5 × 10^-4 Torr of O₂. Annealing of the BST film surface in oxygen prior to deposition of the top Pt electrode results in a clean top Pt/BST interface that yields BST capacitors with much lower and more symmetric leakage current characteristics, and lower dielectric losses compared to BST capacitors with contaminated top Pt electrode/BST interfaces.

Original language	English
Pages (from-to)	2593-2595
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	16
DOIs	https://doi.org/10.1063/1.1318730
State	Published - Oct 16 2000
Externally published	Yes

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title = "(BaxSr1-x)Ti1+yO3+z interface contamination and its effect on electrical properties",

abstract = "Surface contamination and cleaning processes of (BaxSr-x)Ti1+yO3+z(BST) and Pt films were investigated using in situ, real-time mass spectroscopy of recoiled ions (MSRI). MSRI analysis revealed that BST film surfaces exposed to atmospheric ambient are contaminated with carbon and hydrogen containing species, which could be removed by thermal decomposition/desorption in an oxygen ambient. Cleaning of the BST surface was accomplished by annealing at 500°C in ≥1 mTorr O2, resulting in complete elimination of these species. Similar contamination on Pt film surfaces could be eliminated with only 200°C annealing in 5 × 10-4 Torr of O2. Annealing of the BST film surface in oxygen prior to deposition of the top Pt electrode results in a clean top Pt/BST interface that yields BST capacitors with much lower and more symmetric leakage current characteristics, and lower dielectric losses compared to BST capacitors with contaminated top Pt electrode/BST interfaces.",

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AU - Im, Jaemo

AU - Streiffer, S. K.

AU - Auciello, Orlando

AU - Krauss, Alan R.

PY - 2000/10/16

Y1 - 2000/10/16

N2 - Surface contamination and cleaning processes of (BaxSr-x)Ti1+yO3+z(BST) and Pt films were investigated using in situ, real-time mass spectroscopy of recoiled ions (MSRI). MSRI analysis revealed that BST film surfaces exposed to atmospheric ambient are contaminated with carbon and hydrogen containing species, which could be removed by thermal decomposition/desorption in an oxygen ambient. Cleaning of the BST surface was accomplished by annealing at 500°C in ≥1 mTorr O2, resulting in complete elimination of these species. Similar contamination on Pt film surfaces could be eliminated with only 200°C annealing in 5 × 10-4 Torr of O2. Annealing of the BST film surface in oxygen prior to deposition of the top Pt electrode results in a clean top Pt/BST interface that yields BST capacitors with much lower and more symmetric leakage current characteristics, and lower dielectric losses compared to BST capacitors with contaminated top Pt electrode/BST interfaces.

AB - Surface contamination and cleaning processes of (BaxSr-x)Ti1+yO3+z(BST) and Pt films were investigated using in situ, real-time mass spectroscopy of recoiled ions (MSRI). MSRI analysis revealed that BST film surfaces exposed to atmospheric ambient are contaminated with carbon and hydrogen containing species, which could be removed by thermal decomposition/desorption in an oxygen ambient. Cleaning of the BST surface was accomplished by annealing at 500°C in ≥1 mTorr O2, resulting in complete elimination of these species. Similar contamination on Pt film surfaces could be eliminated with only 200°C annealing in 5 × 10-4 Torr of O2. Annealing of the BST film surface in oxygen prior to deposition of the top Pt electrode results in a clean top Pt/BST interface that yields BST capacitors with much lower and more symmetric leakage current characteristics, and lower dielectric losses compared to BST capacitors with contaminated top Pt electrode/BST interfaces.

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(Ba_xSr_1-x)Ti_1+yO_3+z interface contamination and its effect on electrical properties

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