Band gap tuning in ferroelectric Bi 4Ti 3O 12 by alloying with LaTMO 3 (TM Ti, V, Cr, Mn, Co, Ni, and Al)

Woo Seok Choi; Ho Nyung Lee

doi:10.1063/1.3697645

Band gap tuning in ferroelectric Bi ₄Ti ₃O ₁₂ by alloying with LaTMO ₃ (TM Ti, V, Cr, Mn, Co, Ni, and Al)

Woo Seok Choi
, Ho Nyung Lee

Materials Science and Technology Div

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We fabricated ferroelectric Bi ₄Ti ₃O ₁₂ (BiT) single crystalline thin films site-specifically substituted with LaTMO ₃ (TM Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO ₃ substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of BiT, some of BiT-LaTMO ₃ showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO ₃ showed the largest band gap reduction by ∼1 eV, positioning itself as a promising material for highly efficient opto-electronic devices.

Original language	English
Article number	132903
Journal	Applied Physics Letters
Volume	100
Issue number	13
DOIs	https://doi.org/10.1063/1.3697645
State	Published - Mar 26 2012

Funding

We appreciate useful discussion with Khuong P. Ong. This work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

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title = "Band gap tuning in ferroelectric Bi 4Ti 3O 12 by alloying with LaTMO 3 (TM Ti, V, Cr, Mn, Co, Ni, and Al)",

abstract = "We fabricated ferroelectric Bi 4Ti 3O 12 (BiT) single crystalline thin films site-specifically substituted with LaTMO 3 (TM Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO 3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of BiT, some of BiT-LaTMO 3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO 3 showed the largest band gap reduction by ∼1 eV, positioning itself as a promising material for highly efficient opto-electronic devices.",

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AU - Seok Choi, Woo

AU - Nyung Lee, Ho

PY - 2012/3/26

Y1 - 2012/3/26

N2 - We fabricated ferroelectric Bi 4Ti 3O 12 (BiT) single crystalline thin films site-specifically substituted with LaTMO 3 (TM Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO 3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of BiT, some of BiT-LaTMO 3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO 3 showed the largest band gap reduction by ∼1 eV, positioning itself as a promising material for highly efficient opto-electronic devices.

AB - We fabricated ferroelectric Bi 4Ti 3O 12 (BiT) single crystalline thin films site-specifically substituted with LaTMO 3 (TM Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO 3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of BiT, some of BiT-LaTMO 3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO 3 showed the largest band gap reduction by ∼1 eV, positioning itself as a promising material for highly efficient opto-electronic devices.

UR - https://www.scopus.com/pages/publications/84859544781

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JF - Applied Physics Letters

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ER -

Band gap tuning in ferroelectric Bi ₄Ti ₃O ₁₂ by alloying with LaTMO ₃ (TM Ti, V, Cr, Mn, Co, Ni, and Al)

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