Abstract
We fabricated ferroelectric Bi 4Ti 3O 12 (BiT) single crystalline thin films site-specifically substituted with LaTMO 3 (TM Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO 3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of BiT, some of BiT-LaTMO 3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO 3 showed the largest band gap reduction by ∼1 eV, positioning itself as a promising material for highly efficient opto-electronic devices.
Original language | English |
---|---|
Article number | 132903 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 13 |
DOIs | |
State | Published - Mar 26 2012 |
Funding
We appreciate useful discussion with Khuong P. Ong. This work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.