Band gap tuning in ferroelectric Bi 4Ti 3O 12 by alloying with LaTMO 3 (TM Ti, V, Cr, Mn, Co, Ni, and Al)

Woo Seok Choi, Ho Nyung Lee

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

We fabricated ferroelectric Bi 4Ti 3O 12 (BiT) single crystalline thin films site-specifically substituted with LaTMO 3 (TM Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO 3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of BiT, some of BiT-LaTMO 3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO 3 showed the largest band gap reduction by ∼1 eV, positioning itself as a promising material for highly efficient opto-electronic devices.

Original languageEnglish
Article number132903
JournalApplied Physics Letters
Volume100
Issue number13
DOIs
StatePublished - Mar 26 2012

Funding

We appreciate useful discussion with Khuong P. Ong. This work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

Fingerprint

Dive into the research topics of 'Band gap tuning in ferroelectric Bi 4Ti 3O 12 by alloying with LaTMO 3 (TM Ti, V, Cr, Mn, Co, Ni, and Al)'. Together they form a unique fingerprint.

Cite this