AYUSH: Extending Lifetime of SRAM-NVM Way-Based Hybrid Caches Using Wear-Leveling

Sparsh Mittal, Jeffrey S. Vetter

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

The features and limitations of both SRAM and NVM (non-volatile memory) technologies have led the researchers to study SRAM-NVM way-based hybrid last level caches (LLCs). Since large leakage power consumption of SRAM allows including only few SRAM ways, the small write-endurance of NVM may still lead to small lifetime of these hybrid caches. We propose AYUSH, a technique for improving lifetime of SRAM-NVM hybrid caches. AYUSH uses data-migration approach to preferentially utilize SRAM for storing write-intensive data. Microarchitectural simulations have shown that AYUSH provides larger improvement in lifetime than three previous techniques. For single, dual and quad-core system configurations, the average increase in cache lifetime with AYUSH is 6.90×, 24.06× and 47.62×, respectively. Also, it does not harm performance or energy efficiency and works well for a range of system and algorithm parameters.

Original languageEnglish
Title of host publicationProceedings - IEEE 23rd International Symposium on Modeling, Analysis, and Simulation of Computer and Telecommunication Systems, MASCOTS 2015
PublisherIEEE Computer Society
Pages112-121
Number of pages10
ISBN (Electronic)9781467377201
DOIs
StatePublished - Nov 16 2015
EventIEEE 23rd International Symposium on Modeling, Analysis, and Simulation of Computer and Telecommunication Systems, MASCOTS 2015 - Atlanta, United States
Duration: Oct 5 2015Oct 7 2015

Publication series

NameProceedings - IEEE Computer Society's Annual International Symposium on Modeling, Analysis, and Simulation of Computer and Telecommunications Systems, MASCOTS
Volume2015-November
ISSN (Print)1526-7539

Conference

ConferenceIEEE 23rd International Symposium on Modeling, Analysis, and Simulation of Computer and Telecommunication Systems, MASCOTS 2015
Country/TerritoryUnited States
CityAtlanta
Period10/5/1510/7/15

Keywords

  • Non-volatile memory
  • intra-set wear-leveling
  • lifetime enhancement
  • write-endurance
  • write-minimization

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