Atomically-thin HfSe2 transistors with native metal oxides

Michal J. Mleczko; Chaofan Zhang; Hye Ryoung Lee; Hsueh Hui Kuo; Blanka Magyari-Kope; Zhi Xun Shen; Robert G. Moore; Ian R. Fisher; Yoshio Nishi; Eric Pop

doi:10.1109/DRC.2016.7548474

Atomically-thin HfSe₂ transistors with native metal oxides

Michal J. Mleczko, Chaofan Zhang, Hye Ryoung Lee, Hsueh Hui Kuo, Blanka Magyari-Kope, Zhi Xun Shen, Robert G. Moore, Ian R. Fisher, Yoshio Nishi, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

HfSe₂ is a layered semiconductor relevant for two-dimensional (2D) field effect transistors (FETs), with recent reports of a bulk band-gap comparable to Silicon (E_g ∼ 1.1 eV) [1,2] and oxidation into the high-Κ insulator HO2 [1,3]. However, extreme environmental sensitivity has prevented device measurements in samples below bulk (∼ 20 nm) thickness [3]. Here, we present the first systematic study of HfSe₂ devices, including joint computational and spectroscopic elucidation of its electronic band structure, characterization of ambient degradation, and transport measurements down to carefully encapsulated trilayers. Transistors fabricated in inert atmospheres and capped with AlOx are long-term air-stable, with comparable performance to other 2D dichalcogenide semiconductors (I_on/I_off ∼ 10⁶, current densities ∼30 μA/μm) but offering native integration with high-K HfOx dielectrics.

Original language	English
Title of host publication	74th Annual Device Research Conference, DRC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509028276
DOIs	https://doi.org/10.1109/DRC.2016.7548474
State	Published - Aug 22 2016
Externally published	Yes
Event	74th Annual Device Research Conference, DRC 2016 - Newark, United States Duration: Jun 19 2016 → Jun 22 2016

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2016-August
ISSN (Print)	1548-3770

Conference

Conference	74th Annual Device Research Conference, DRC 2016
Country/Territory	United States
City	Newark
Period	06/19/16 → 06/22/16

Access to Document

10.1109/DRC.2016.7548474

Cite this

Mleczko, M. J., Zhang, C., Lee, H. R., Kuo, H. H., Magyari-Kope, B., Shen, Z. X., Moore, R. G., Fisher, I. R., Nishi, Y., & Pop, E. (2016). Atomically-thin HfSe₂ transistors with native metal oxides. In 74th Annual Device Research Conference, DRC 2016 Article 7548474 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2016.7548474

@inproceedings{525fd67a96c7414e84ee475ba9139798,

title = "Atomically-thin HfSe2 transistors with native metal oxides",

abstract = "HfSe2 is a layered semiconductor relevant for two-dimensional (2D) field effect transistors (FETs), with recent reports of a bulk band-gap comparable to Silicon (Eg ∼ 1.1 eV) [1,2] and oxidation into the high-Κ insulator HO2 [1,3]. However, extreme environmental sensitivity has prevented device measurements in samples below bulk (∼ 20 nm) thickness [3]. Here, we present the first systematic study of HfSe2 devices, including joint computational and spectroscopic elucidation of its electronic band structure, characterization of ambient degradation, and transport measurements down to carefully encapsulated trilayers. Transistors fabricated in inert atmospheres and capped with AlOx are long-term air-stable, with comparable performance to other 2D dichalcogenide semiconductors (Ion/Ioff ∼ 106, current densities ∼30 μA/μm) but offering native integration with high-K HfOx dielectrics.",

author = "Mleczko, {Michal J.} and Chaofan Zhang and Lee, {Hye Ryoung} and Kuo, {Hsueh Hui} and Blanka Magyari-Kope and Shen, {Zhi Xun} and Moore, {Robert G.} and Fisher, {Ian R.} and Yoshio Nishi and Eric Pop",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 74th Annual Device Research Conference, DRC 2016 ; Conference date: 19-06-2016 Through 22-06-2016",

year = "2016",

month = aug,

day = "22",

doi = "10.1109/DRC.2016.7548474",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "74th Annual Device Research Conference, DRC 2016",

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Mleczko, MJ, Zhang, C, Lee, HR, Kuo, HH, Magyari-Kope, B, Shen, ZX, Moore, RG, Fisher, IR, Nishi, Y & Pop, E 2016, Atomically-thin HfSe₂ transistors with native metal oxides. in 74th Annual Device Research Conference, DRC 2016., 7548474, Device Research Conference - Conference Digest, DRC, vol. 2016-August, Institute of Electrical and Electronics Engineers Inc., 74th Annual Device Research Conference, DRC 2016, Newark, United States, 06/19/16. https://doi.org/10.1109/DRC.2016.7548474

Atomically-thin HfSe₂ transistors with native metal oxides. / Mleczko, Michal J.; Zhang, Chaofan; Lee, Hye Ryoung et al.
74th Annual Device Research Conference, DRC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7548474 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Atomically-thin HfSe2 transistors with native metal oxides

AU - Mleczko, Michal J.

AU - Zhang, Chaofan

AU - Lee, Hye Ryoung

AU - Kuo, Hsueh Hui

AU - Magyari-Kope, Blanka

AU - Shen, Zhi Xun

AU - Moore, Robert G.

AU - Fisher, Ian R.

AU - Nishi, Yoshio

AU - Pop, Eric

PY - 2016/8/22

Y1 - 2016/8/22

N2 - HfSe2 is a layered semiconductor relevant for two-dimensional (2D) field effect transistors (FETs), with recent reports of a bulk band-gap comparable to Silicon (Eg ∼ 1.1 eV) [1,2] and oxidation into the high-Κ insulator HO2 [1,3]. However, extreme environmental sensitivity has prevented device measurements in samples below bulk (∼ 20 nm) thickness [3]. Here, we present the first systematic study of HfSe2 devices, including joint computational and spectroscopic elucidation of its electronic band structure, characterization of ambient degradation, and transport measurements down to carefully encapsulated trilayers. Transistors fabricated in inert atmospheres and capped with AlOx are long-term air-stable, with comparable performance to other 2D dichalcogenide semiconductors (Ion/Ioff ∼ 106, current densities ∼30 μA/μm) but offering native integration with high-K HfOx dielectrics.

AB - HfSe2 is a layered semiconductor relevant for two-dimensional (2D) field effect transistors (FETs), with recent reports of a bulk band-gap comparable to Silicon (Eg ∼ 1.1 eV) [1,2] and oxidation into the high-Κ insulator HO2 [1,3]. However, extreme environmental sensitivity has prevented device measurements in samples below bulk (∼ 20 nm) thickness [3]. Here, we present the first systematic study of HfSe2 devices, including joint computational and spectroscopic elucidation of its electronic band structure, characterization of ambient degradation, and transport measurements down to carefully encapsulated trilayers. Transistors fabricated in inert atmospheres and capped with AlOx are long-term air-stable, with comparable performance to other 2D dichalcogenide semiconductors (Ion/Ioff ∼ 106, current densities ∼30 μA/μm) but offering native integration with high-K HfOx dielectrics.

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