Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits

Zhipeng Dong; Huan Zhao; Don DIMarzio; Myung Geun Han; Lihua Zhang; Jesse Tice; Han Wang; Jing Guo

doi:10.1109/TED.2018.2830328

Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits

Zhipeng Dong, Huan Zhao, Don DIMarzio, Myung Geun Han, Lihua Zhang, Jesse Tice, Han Wang, Jing Guo

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Reducing the energy and power dissipation of conductive bridge random access memory (CBRAM) cells is of critical importance for their applications in future Internet of Things (IoT) device and neuromorphic computing platforms. Atomically thin CBRAMs enabled by 2-D materials are studied theoretically by using 3-D kinetic Monte Carlo simulations together with experimental characterization. The results indicate the performance potential of attoJoule energy dissipation for intrinsic filament formation and a filament size of a single atomistic chain in such a CBRAM cell. The atomically thin CBRAM cells also show qualitatively different features from conventional CBRAM cells, including complete rupture of the filament in the reset stage and comparable forming and set voltages. The scaling and variability of the CBRAM cells down to sub-nanometer size of the switching layer as realized in the experiment are systematically studied, which indicates performance improvement and increased relative variability as the switching layer scales down. The results establish the ultimate limits of the size and energy scaling for CBRAM cells and illustrate the unique application of 2-D materials in ultralow power memory devices.

Original language	English
Article number	8356134
Pages (from-to)	4160-4166
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	10
DOIs	https://doi.org/10.1109/TED.2018.2830328
State	Published - Oct 2018
Externally published	Yes

Funding

This research used Hitachi 2700C STEM of the Center for Functional Nanomaterials, which is a U.S. DOE Office of Science Facility at Brookhaven National Laboratory, Upton, NY, USA, under Contract DE-SC0012704. Manuscript received February 7, 2018; revised April 3, 2018; accepted April 22, 2018. Date of publication May 8, 2018; date of current version September 20, 2018. The work of Z. Dong and J. Guo was supported by the National Science Foundation under Grant CCF-1618762. The work of H. Zhao and H. Wang was supported in part by the Army Research Office under Grant W911NF-16-1-0435 and in part by the National Science Foundation under Grant CCF-1618038. The review of this paper was arranged by Editor Y. Yoon. (Corresponding author: Zhipeng Dong.) Z. Dong and J. Guo are with the Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 USA (e-mail: [email protected]; [email protected]).

Funders	Funder number
DOE Office of Science	DE-SC0012704
National Science Foundation	CCF-1618762
Army Research Office	CCF-1618038, W911NF-16-1-0435

Keywords

2-D material
Monte Carlo (MC)
attoJoule energy dissipation
conductive bridge (CB) random access memory (CBRAM)
nonvolatile memory

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10.1109/TED.2018.2830328

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title = "Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits",

abstract = "Reducing the energy and power dissipation of conductive bridge random access memory (CBRAM) cells is of critical importance for their applications in future Internet of Things (IoT) device and neuromorphic computing platforms. Atomically thin CBRAMs enabled by 2-D materials are studied theoretically by using 3-D kinetic Monte Carlo simulations together with experimental characterization. The results indicate the performance potential of attoJoule energy dissipation for intrinsic filament formation and a filament size of a single atomistic chain in such a CBRAM cell. The atomically thin CBRAM cells also show qualitatively different features from conventional CBRAM cells, including complete rupture of the filament in the reset stage and comparable forming and set voltages. The scaling and variability of the CBRAM cells down to sub-nanometer size of the switching layer as realized in the experiment are systematically studied, which indicates performance improvement and increased relative variability as the switching layer scales down. The results establish the ultimate limits of the size and energy scaling for CBRAM cells and illustrate the unique application of 2-D materials in ultralow power memory devices.",

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author = "Zhipeng Dong and Huan Zhao and Don DIMarzio and Han, {Myung Geun} and Lihua Zhang and Jesse Tice and Han Wang and Jing Guo",

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Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits

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