Abstract
We report atomically precise pentagonal PdSe2 nanoribbons (PNRs) fabricated on a pristine PdSe2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.
Original language | English |
---|---|
Pages (from-to) | 1951-1957 |
Number of pages | 7 |
Journal | ACS Nano |
Volume | 14 |
Issue number | 2 |
DOIs | |
State | Published - Feb 25 2020 |
Funding
This research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. A.H. and D.M. acknowledge support from the Gordon and Betty Moore Foundation’s EPiQS Initiative through grant GBMF441.
Keywords
- FET device
- Raman spectroscopy
- ballistic transport
- first-principles calculations
- nanoribbons
- scanning tunneling microscopy
- transition metal dichalcogenides