Abstract
Our LEED and STM results confirm that annealed surfaces of the Ga/Ge(001) system, in contrast to those of the Al/Si(001), In/Si(001) and In/Ge(001) systems, reconstruct rather than facet to {103} facets. In the submonolayer range of Ga coverage there appears to be only one Ga-related reconstruction (i.e. Ge(001)-(7 x 5.5)-Ga). On the basis of the information gathered from our high-resolution STM images, and taking into account the three common features of stable surface structures of group III metal-group IV semiconductor systems which have been disclosed very recently, an atomic structure model is proposed for the reconstruction for further investigations.
Original language | English |
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Pages (from-to) | L484-L490 |
Journal | Surface Science |
Volume | 405 |
Issue number | 1 |
State | Published - May 12 1998 |
Externally published | Yes |
Funding
This work was supported by the National Natural Science Foundation of China and the Doctoral Program Foundation of the Education Ministry of China.
Keywords
- Faceting
- Gallium
- Germanium
- Low energy electron diffraction (LEED)
- Metal-semiconductor interfaces
- Scanning tunneling microscopy
- Surface reconstruction