Atomic structure of the Ge(001)-(7 x 5.5)-Ga surface

Zheng Gai, R. G. Zhao, Hang Ji, W. S. Yang

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Abstract

Our LEED and STM results confirm that annealed surfaces of the Ga/Ge(001) system, in contrast to those of the Al/Si(001), In/Si(001) and In/Ge(001) systems, reconstruct rather than facet to {103} facets. In the submonolayer range of Ga coverage there appears to be only one Ga-related reconstruction (i.e. Ge(001)-(7 x 5.5)-Ga). On the basis of the information gathered from our high-resolution STM images, and taking into account the three common features of stable surface structures of group III metal-group IV semiconductor systems which have been disclosed very recently, an atomic structure model is proposed for the reconstruction for further investigations.

Original languageEnglish
Pages (from-to)L484-L490
JournalSurface Science
Volume405
Issue number1
StatePublished - May 12 1998
Externally publishedYes

Funding

This work was supported by the National Natural Science Foundation of China and the Doctoral Program Foundation of the Education Ministry of China.

Keywords

  • Faceting
  • Gallium
  • Germanium
  • Low energy electron diffraction (LEED)
  • Metal-semiconductor interfaces
  • Scanning tunneling microscopy
  • Surface reconstruction

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