Atomic structure of prebure-induced amorphous semiconductors

O. I. Barkalov, A. I. Kolesnikov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The paper will briefly review and discub results of our investigations on the atomic correlations in amorphous Zn-Sb, GaSb, GaSb-Ge and Al-Ge alloys. These semiconductor alloys were prepared by solid state reactions in the course of heating the quenched highprebure phases. Structure of the final products was studied by neutron diffraction for the Al-Ge, GaSb and GaSb-Ge alloys and by transmibion electron microscopy for the Al-Ge and Zn-Sb ones. The experimental data obtained were used for reverse Monte Carlo atomic structure modelling of these alloys. The samples thus obtained were proved to be homogeneous bulk amorphous materials containing no crystalline inclusions.

Original languageEnglish
Title of host publicationJoint 20th AIRAPT and 43rd EHPRG International Conference on High Pressure Science and Technology
EditorsEckhard Dinjus
PublisherKarlsruhe Forschungszentrum Karlsruhe gmbH
ISBN (Electronic)9783923704491
StatePublished - 2005
Externally publishedYes
EventInternational Joint 20th AIRAPT and 43rd EHPRG International Conference on High Pressure Science and Technology - Karlsruhe, Germany
Duration: Jun 27 2005Jul 1 2005

Publication series

NameJoint 20th AIRAPT and 43rd EHPRG International Conference on High Pressure Science and Technology

Conference

ConferenceInternational Joint 20th AIRAPT and 43rd EHPRG International Conference on High Pressure Science and Technology
Country/TerritoryGermany
CityKarlsruhe
Period06/27/0507/1/05

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