Abstract
It is important to understand the atomic structure of defect clusters in SiC, a promising material for nuclear application. In this study, we have directly observed and identified nano voids in ion irradiated 3C-SiC at 800 °C, 20 dpa through ABF and HAADF STEM images. A quantitative method was used to analyze HAADF images in which atomic columns with a difference in the number of atoms could be identified and scattered intensities can be computed. Our result shows that these voids are composed of atomic vacancies in an octahedral arrangement. The density of the void was measured by STEM to be 9.2 × 1019m−3 and the size was ∼1.5 nm.
Original language | English |
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Pages (from-to) | 71-75 |
Number of pages | 5 |
Journal | Journal of Nuclear Materials |
Volume | 498 |
DOIs | |
State | Published - Jan 2018 |
Externally published | Yes |
Funding
This work was supported by the Bureau of Energy, Ministry of Economic Affairs (Taiwan) Program NSC104-AB-001-EJ . Electron Microscopy was performed with the JEM-ARM200F microscope at the Material and Chemical Research Laboratories, which is supported by the Industrial Technology Research Institute, Taiwan (Program G301AA5630 ). We thank Tsai-Tian Wu for his assistance with sample preparation.