Atomic-scale manipulation of potential barriers at SrTiO 3 grain boundaries

Pradyumna Prabhumirashi; Vinayak P. Dravid; Andrew R. Lupini; Matthew F. Chisholm; Stephen J. Pennycook

doi:10.1063/1.2046734

Atomic-scale manipulation of potential barriers at SrTiO ₃ grain boundaries

Pradyumna Prabhumirashi, Vinayak P. Dravid, Andrew R. Lupini, Matthew F. Chisholm, Stephen J. Pennycook

electron Microscopy and Microanalysis

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

In oxide grain boundaries (GBs), oxygen ions and their vacancies serve as a common denominator in controlling properties such as GB barrier height and capacitance. Therefore, it is critical to analyze, control and manipulate oxygen and vacancies at oxide interfaces as most of the practical devices are almost always influenced by the presence of electrostatic potential barriers at interfaces. Here, we report adjustment of a single GB potential barrier via manipulation of oxygen vacancy concentration using simple oxidation and reduction treatments. We validate our analysis with aberration-corrected HAADF imaging and column-by-column EELS coupled with macroscopic transport measurements of isolated GBs to gain important insight into the physical attributes of GB potential barriers.

Original language	English
Article number	121917
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.2046734
State	Published - Sep 19 2005

Funding

This work was supported by the U.S. Department of Energy, Office of Basic Energy Science (DOE-BES) under Grant No. DE-FG02-92ER45475.

Funders	Funder number
DOE-BES	DE-FG02-92ER45475
U.S. Department of Energy
Basic Energy Sciences

Access to Document

10.1063/1.2046734

Cite this

@article{29dcbfbfebdb4587b65f35e8f9c541c8,

title = "Atomic-scale manipulation of potential barriers at SrTiO 3 grain boundaries",

abstract = "In oxide grain boundaries (GBs), oxygen ions and their vacancies serve as a common denominator in controlling properties such as GB barrier height and capacitance. Therefore, it is critical to analyze, control and manipulate oxygen and vacancies at oxide interfaces as most of the practical devices are almost always influenced by the presence of electrostatic potential barriers at interfaces. Here, we report adjustment of a single GB potential barrier via manipulation of oxygen vacancy concentration using simple oxidation and reduction treatments. We validate our analysis with aberration-corrected HAADF imaging and column-by-column EELS coupled with macroscopic transport measurements of isolated GBs to gain important insight into the physical attributes of GB potential barriers.",

author = "Pradyumna Prabhumirashi and Dravid, {Vinayak P.} and Lupini, {Andrew R.} and Chisholm, {Matthew F.} and Pennycook, {Stephen J.}",

year = "2005",

month = sep,

day = "19",

doi = "10.1063/1.2046734",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Atomic-scale manipulation of potential barriers at SrTiO 3 grain boundaries

AU - Prabhumirashi, Pradyumna

AU - Dravid, Vinayak P.

AU - Lupini, Andrew R.

AU - Chisholm, Matthew F.

AU - Pennycook, Stephen J.

PY - 2005/9/19

Y1 - 2005/9/19

N2 - In oxide grain boundaries (GBs), oxygen ions and their vacancies serve as a common denominator in controlling properties such as GB barrier height and capacitance. Therefore, it is critical to analyze, control and manipulate oxygen and vacancies at oxide interfaces as most of the practical devices are almost always influenced by the presence of electrostatic potential barriers at interfaces. Here, we report adjustment of a single GB potential barrier via manipulation of oxygen vacancy concentration using simple oxidation and reduction treatments. We validate our analysis with aberration-corrected HAADF imaging and column-by-column EELS coupled with macroscopic transport measurements of isolated GBs to gain important insight into the physical attributes of GB potential barriers.

AB - In oxide grain boundaries (GBs), oxygen ions and their vacancies serve as a common denominator in controlling properties such as GB barrier height and capacitance. Therefore, it is critical to analyze, control and manipulate oxygen and vacancies at oxide interfaces as most of the practical devices are almost always influenced by the presence of electrostatic potential barriers at interfaces. Here, we report adjustment of a single GB potential barrier via manipulation of oxygen vacancy concentration using simple oxidation and reduction treatments. We validate our analysis with aberration-corrected HAADF imaging and column-by-column EELS coupled with macroscopic transport measurements of isolated GBs to gain important insight into the physical attributes of GB potential barriers.

UR - http://www.scopus.com/inward/record.url?scp=28344445722&partnerID=8YFLogxK

U2 - 10.1063/1.2046734

DO - 10.1063/1.2046734

M3 - Article

AN - SCOPUS:28344445722

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121917

ER -

Atomic-scale manipulation of potential barriers at SrTiO ₃ grain boundaries

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this