Atomic-scale details of dislocation-stacking fault tetrahedra interaction

Yu N. Osetsky, R. E. Stoller, D. Rodney, D. J. Bacon

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

Stacking fault tetrahedra (SFTs) are formed during irradiation of f.c.c. metals and alloys with low stacking fault energy. The high number density of SFTs observed suggests that they should contribute to radiation-induced hardening and, therefore, be taken into account when estimating mechanical property changes of irradiated materials. The key issue is to describe the interaction between a moving dislocation and an individual SFT, which is characterized by a small physical scale of about 100 nm. In this paper we present results of an atomistic simulation of edge and screw dislocations interacting with small SFTs at different temperatures and strain rates and present mechanisms which can explain the formation of defect-free channels observed experimentally.

Original languageEnglish
Pages (from-to)370-373
Number of pages4
JournalMaterials Science and Engineering: A
Volume400-401
Issue number1-2 SUPPL.
DOIs
StatePublished - Jul 25 2005

Funding

The authors thank Drs. S. Zinkle, B.N. Singh and B. Wirth for stimulating discussions. This research was sponsored by the Division of Materials Sciences and Engineering and the Office of Fusion Energy Sciences, US Department of Energy, under contract DE-AC05-00OR22725 with UT-Battelle, LLC.

Keywords

  • Defect-free channels
  • Dislocation
  • Stacking fault tetrahedra

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