TY - JOUR
T1 - Atomic-scale compensation phenomena at polar interfaces
AU - Chisholm, Matthew F.
AU - Luo, Weidong
AU - Oxley, Mark P.
AU - Pantelides, Sokrates T.
AU - Lee, Ho Nyung
PY - 2010/11/4
Y1 - 2010/11/4
N2 - The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density-functional theory to show how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by an interfacial charge generated, for example, by oxygen vacancies.
AB - The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density-functional theory to show how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by an interfacial charge generated, for example, by oxygen vacancies.
UR - http://www.scopus.com/inward/record.url?scp=78149342382&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.105.197602
DO - 10.1103/PhysRevLett.105.197602
M3 - Article
AN - SCOPUS:78149342382
SN - 0031-9007
VL - 105
JO - Physical Review Letters
JF - Physical Review Letters
IS - 19
M1 - 197602
ER -