Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques

Min Chul Kang; Farhan Islam; Jiaqiang Yan; David Vaknin; Robert J. McQueeney; Ping Lu; Lin Zhou

doi:10.1093/mam/ozae078

Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques

Min Chul Kang, Farhan Islam, Jiaqiang Yan, David Vaknin, Robert J. McQueeney, Ping Lu, Lin Zhou

Correlated Electron Materials

Research output: Contribution to journal › Article › peer-review

Abstract

Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb₂Te₃ crystal. More importantly, the methodology developed in this study extends beyond Mn-doped Sb₂Te₃ to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.

Original language	English
Pages (from-to)	807-816
Number of pages	10
Journal	Microscopy and Microanalysis
Volume	30
Issue number	5
DOIs	https://doi.org/10.1093/mam/ozae078
State	Published - Oct 1 2024

Funding

This work was supported in part by the US Department of Energy, Office of Science. L.Z. and M.K. acknowledge the support from the startup funding from Iowa State University. All electron microscopy and related work were performed using instruments in the Sensitive Instrument Facility in Ames National Laboratory. The Ames National Laboratory is operated for the US Department of Energy by Iowa State University under Contract No. DE-AC02-07CH11358. P.L. acknowledges the support from the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the US Department of Energy (DOE) Office of Science by Los Alamos National Laboratory (contract 89233218NCA000001) and Sandia National Laboratories (contract DE-NA0003525). Sandia National Laboratories is a multiprogram laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc. for the US Department of Energy\u2019s National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the US Department of Energy or the United States Government. Notice: This work was produced by Iowa State University under Contract No. DE-AC02CH11358 with the US Department of Energy. Publisher acknowledges the US Government license and the provision to provide public access under the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan). This work was supported in part by the US Department of Energy, Office of Science. L.Z. and M.K. acknowledge the support from the startup funding from Iowa State University. All electron microscopy and related work were performed using instruments in the Sensitive Instrument Facility in Ames National Laboratory. The Ames National Laboratory is operated for the US Department of Energy by Iowa State University under Contract No. DE-AC02-07CH11358. P.L. acknowledges the support from the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the US Department of Energy (DOE) Office of Science by Los Alamos National Laboratory (contract 89233218NCA000001) and Sandia National Laboratories (contract DE-NA0003525). Sandia National Laboratories is a multiprogram laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc. for the US Department of Energy's National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the US Department of Energy or the United States Government. Notice: This work was produced by Iowa State University under Contract No. DE-AC02CH11358 with the US Department of Energy. Publisher acknowledges the US Government license and the provision to provide public access under the DOE Public Access Plan ( http://energy.gov/downloads/doe-public-access-plan ).

Keywords

aberration-corrected scanning transmission electron microscopy (AC-STEM)
atomic-scale EDS mapping
dilute magnet
lattice averaging
non-rigid frame registration

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10.1093/mam/ozae078

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@article{e2604c99dad246f8ba7ff9b5b287faf5,

title = "Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques",

abstract = "Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb2Te3 crystal. More importantly, the methodology developed in this study extends beyond Mn-doped Sb2Te3 to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.",

keywords = "aberration-corrected scanning transmission electron microscopy (AC-STEM), atomic-scale EDS mapping, dilute magnet, lattice averaging, non-rigid frame registration",

author = "Kang, {Min Chul} and Farhan Islam and Jiaqiang Yan and David Vaknin and McQueeney, {Robert J.} and Ping Lu and Lin Zhou",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2024.",

year = "2024",

month = oct,

day = "1",

doi = "10.1093/mam/ozae078",

language = "English",

volume = "30",

pages = "807--816",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Oxford University Press",

number = "5",

}

TY - JOUR

T1 - Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques

AU - Kang, Min Chul

AU - Islam, Farhan

AU - Yan, Jiaqiang

AU - Vaknin, David

AU - McQueeney, Robert J.

AU - Lu, Ping

AU - Zhou, Lin

N1 - Publisher Copyright: © The Author(s) 2024.

PY - 2024/10/1

Y1 - 2024/10/1

N2 - Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb2Te3 crystal. More importantly, the methodology developed in this study extends beyond Mn-doped Sb2Te3 to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.

AB - Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb2Te3 crystal. More importantly, the methodology developed in this study extends beyond Mn-doped Sb2Te3 to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.

KW - aberration-corrected scanning transmission electron microscopy (AC-STEM)

KW - atomic-scale EDS mapping

KW - dilute magnet

KW - lattice averaging

KW - non-rigid frame registration

UR - http://www.scopus.com/inward/record.url?scp=85208514785&partnerID=8YFLogxK

U2 - 10.1093/mam/ozae078

DO - 10.1093/mam/ozae078

M3 - Article

C2 - 39196820

AN - SCOPUS:85208514785

SN - 1431-9276

VL - 30

SP - 807

EP - 816

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - 5

ER -

Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques

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