Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall

M. Herrera; M. Chi; M. Bonds; N. D. Browning; Joseph N. Woolman; Robert E. Kvaas; Sean F. Harris; David R. Rhiger; Cory J. Hill

doi:10.1063/1.2977589

Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall

M. Herrera, M. Chi, M. Bonds, N. D. Browning, Joseph N. Woolman, Robert E. Kvaas, Sean F. Harris, David R. Rhiger, Cory J. Hill

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27 Scopus citations

Abstract

We have analyzed by electron microscopy techniques the effect of the deposition of a SiO2 passivation layer on an InAs/GaSb type-II superlattice (SL) mesa with applications as a photodetector. Our images reveal good conformal coverage by the SiO2 upon an undulating edge of the SL mesa. However, we have observed scarce As clusters at the interface between the SL mesa and the passivation layer and some degree of oxidation of the mesa sidewall. The strong reduction in surface leakage currents demonstrates that the observed imperfections do not have a substantial detrimental effect on the passivation capabilities of the SiO2 layer.

Original language	English
Article number	093106
Journal	Applied Physics Letters
Volume	93
Issue number	9
DOIs	https://doi.org/10.1063/1.2977589
State	Published - 2008
Externally published	Yes

Funding

This work was supported by a grant from the European Union under Contract No. MOIF-CF-2006–21423 and in part by DOE (Grant No. DE-FG02-03ER46057). Additional support was provided by the Missile Defense Agency under Meimei Tidrow. The material growth described here was carried out at the Jet Propulsion Laboratory, California Institute of Technology and was sponsored by the National Aeronautics and Space Administration.

Funders	Funder number
U.S. Department of Energy	DE-FG02-03ER46057
Missile Defense Agency
European Commission	MOIF-CF-2006–21423

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title = "Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall",

abstract = "We have analyzed by electron microscopy techniques the effect of the deposition of a SiO2 passivation layer on an InAs/GaSb type-II superlattice (SL) mesa with applications as a photodetector. Our images reveal good conformal coverage by the SiO2 upon an undulating edge of the SL mesa. However, we have observed scarce As clusters at the interface between the SL mesa and the passivation layer and some degree of oxidation of the mesa sidewall. The strong reduction in surface leakage currents demonstrates that the observed imperfections do not have a substantial detrimental effect on the passivation capabilities of the SiO2 layer.",

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T1 - Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall

AU - Herrera, M.

AU - Chi, M.

AU - Bonds, M.

AU - Browning, N. D.

AU - Woolman, Joseph N.

AU - Kvaas, Robert E.

AU - Harris, Sean F.

AU - Rhiger, David R.

AU - Hill, Cory J.

PY - 2008

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AB - We have analyzed by electron microscopy techniques the effect of the deposition of a SiO2 passivation layer on an InAs/GaSb type-II superlattice (SL) mesa with applications as a photodetector. Our images reveal good conformal coverage by the SiO2 upon an undulating edge of the SL mesa. However, we have observed scarce As clusters at the interface between the SL mesa and the passivation layer and some degree of oxidation of the mesa sidewall. The strong reduction in surface leakage currents demonstrates that the observed imperfections do not have a substantial detrimental effect on the passivation capabilities of the SiO2 layer.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall

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