Atomic resolution study of the interfacial bonding at Si3 N4 / CeO2-δ grain boundaries

W. Walkosz, R. F. Klie, S. Öǧüt, A. Borisevich, P. F. Becher, S. J. Pennycook, J. C. Idrobo

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Abstract

Using a combination of atomic-resolution Z -contrast imaging and electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope, we examine the atomic and electronic structures at the interface between Si3 N4 (10 1- 0) and CeO2-d intergranular film (IGF). Ce atoms are observed to segregate to the interface in a two-layer periodic arrangement, which is significantly different from the structure observed in a previous study. Our EELS experiments show (i) oxygen in direct contact with the terminating Si3 N4 open-ring structures, (ii) a change in the Ce valence from a nominal oxidation state of +3 to almost +4 moving from the interface into the IGF, and (iii) a uniform concentration of Si in the film.

Original languageEnglish
Article number053104
JournalApplied Physics Letters
Volume93
Issue number5
DOIs
StatePublished - 2008

Funding

This work was supported by the NSF under Grant No. DMR-0604964 (W.W., S.O., and J.C.I.) and by the Division of Materials Sciences and Engineering, U.S. DOE under contract with UT-Battelle (A.B., P.F.B., and S.J.P.).

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