Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

S. Hosseini Vajargah; S. Y. Woo; S. Ghanad-Tavakoli; R. N. Kleiman; J. S. Preston; G. A. Botton

doi:10.1063/1.4759160

Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

S. Hosseini Vajargah, S. Y. Woo, S. Ghanad-Tavakoli, R. N. Kleiman, J. S. Preston, G. A. Botton

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs faceting.

Original language	English
Article number	093101
Journal	Journal of Applied Physics
Volume	112
Issue number	9
DOIs	https://doi.org/10.1063/1.4759160
State	Published - Nov 1 2012
Externally published	Yes

Funding

The authors gratefully acknowledge financial support of Ontario Centres of Excellence and ARISE Technologies. Electron Microscopy work was carried out at the Canadian Centre for Electron Microscopy (CCEM), a facility supported by NSERC and McMaster University.

Funders	Funder number
Ontario Centres of Excellence
McMaster University
Natural Sciences and Engineering Research Council of Canada
Arisys Technologies

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Cite this

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title = "Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy",

abstract = "The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs faceting.",

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AU - Hosseini Vajargah, S.

AU - Woo, S. Y.

AU - Ghanad-Tavakoli, S.

AU - Kleiman, R. N.

AU - Preston, J. S.

AU - Botton, G. A.

PY - 2012/11/1

Y1 - 2012/11/1

N2 - The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs faceting.

AB - The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs faceting.

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Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

Abstract

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