Atomic origins of surface core levels on Si(111)-(7×7) studied by site-dependent Ge substitution

J. A. Carlisle; T. Miller; T. C. Chiang

doi:10.1103/PhysRevB.45.3811

Atomic origins of surface core levels on Si(111)-(7×7) studied by site-dependent Ge substitution

J. A. Carlisle, T. Miller, T. C. Chiang

University of Illinois

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24 Scopus citations

Abstract

Synchrotron-radiation photoemission has been used to examine the site-dependent Ge substitution for Si on Si(111)-(7×7) surfaces. The surface components of the Si 2p and Ge 3d core levels are analyzed as a function of Ge coverage and annealing temperature. The results show the lower-binding-energy component in the Si 2p core to be derived from adatom emission. Implications in regard to adatom"rest-atom charge transfer are discussed.

Original language	English
Pages (from-to)	3811-3814
Number of pages	4
Journal	Physical Review B
Volume	45
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.45.3811
State	Published - 1992
Externally published	Yes

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10.1103/PhysRevB.45.3811

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title = "Atomic origins of surface core levels on Si(111)-(7×7) studied by site-dependent Ge substitution",

abstract = "Synchrotron-radiation photoemission has been used to examine the site-dependent Ge substitution for Si on Si(111)-(7×7) surfaces. The surface components of the Si 2p and Ge 3d core levels are analyzed as a function of Ge coverage and annealing temperature. The results show the lower-binding-energy component in the Si 2p core to be derived from adatom emission. Implications in regard to adatom{"}rest-atom charge transfer are discussed.",

author = "Carlisle, {J. A.} and T. Miller and Chiang, {T. C.}",

year = "1992",

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language = "English",

volume = "45",

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T1 - Atomic origins of surface core levels on Si(111)-(7×7) studied by site-dependent Ge substitution

AU - Carlisle, J. A.

AU - Miller, T.

AU - Chiang, T. C.

PY - 1992

Y1 - 1992

N2 - Synchrotron-radiation photoemission has been used to examine the site-dependent Ge substitution for Si on Si(111)-(7×7) surfaces. The surface components of the Si 2p and Ge 3d core levels are analyzed as a function of Ge coverage and annealing temperature. The results show the lower-binding-energy component in the Si 2p core to be derived from adatom emission. Implications in regard to adatom"rest-atom charge transfer are discussed.

AB - Synchrotron-radiation photoemission has been used to examine the site-dependent Ge substitution for Si on Si(111)-(7×7) surfaces. The surface components of the Si 2p and Ge 3d core levels are analyzed as a function of Ge coverage and annealing temperature. The results show the lower-binding-energy component in the Si 2p core to be derived from adatom emission. Implications in regard to adatom"rest-atom charge transfer are discussed.

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U2 - 10.1103/PhysRevB.45.3811

DO - 10.1103/PhysRevB.45.3811

M3 - Article

AN - SCOPUS:0343633285

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JO - Physical Review B

JF - Physical Review B

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ER -

Atomic origins of surface core levels on Si(111)-(7×7) studied by site-dependent Ge substitution

Abstract

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