Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Woo Seok Choi; Christopher M. Rouleau; Sung Seok A. Seo; Zhenlin Luo; Hua Zhou; Timothy T. Fister; Jeffrey A. Eastman; Paul H. Fuoss; Dillon D. Fong; Jonathan Z. Tischler; Gyula Eres; Matthew F. Chisholm; Ho Nyung Lee

doi:10.1002/adma.201202691

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Woo Seok Choi, Christopher M. Rouleau, Sung Seok A. Seo, Zhenlin Luo, Hua Zhou, Timothy T. Fister, Jeffrey A. Eastman, Paul H. Fuoss, Dillon D. Fong, Jonathan Z. Tischler, Gyula Eres, Matthew F. Chisholm, Ho Nyung Lee

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO₃/SrTiO₃ heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO₃ grown at high oxygen pressure dramatically enhances interface abruptness.

Original language	English
Pages (from-to)	6423-6428
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	48
DOIs	https://doi.org/10.1002/adma.201202691
State	Published - Dec 18 2012

Keywords

LaAlO /SrTiO
atomic layer engineering
epitaxial strain
perovskite oxide interface
pulsed laser deposition

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10.1002/adma.201202691

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title = "Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces",

abstract = "Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO3/SrTiO3 heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO3 grown at high oxygen pressure dramatically enhances interface abruptness.",

keywords = "LaAlO /SrTiO, atomic layer engineering, epitaxial strain, perovskite oxide interface, pulsed laser deposition",

author = "Choi, \{Woo Seok\} and Rouleau, \{Christopher M.\} and Seo, \{Sung Seok A.\} and Zhenlin Luo and Hua Zhou and Fister, \{Timothy T.\} and Eastman, \{Jeffrey A.\} and Fuoss, \{Paul H.\} and Fong, \{Dillon D.\} and Tischler, \{Jonathan Z.\} and Gyula Eres and Chisholm, \{Matthew F.\} and Lee, \{Ho Nyung\}",

year = "2012",

month = dec,

day = "18",

doi = "10.1002/adma.201202691",

language = "English",

volume = "24",

pages = "6423--6428",

journal = "Advanced Materials",

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TY - JOUR

T1 - Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

AU - Choi, Woo Seok

AU - Rouleau, Christopher M.

AU - Seo, Sung Seok A.

AU - Luo, Zhenlin

AU - Zhou, Hua

AU - Fister, Timothy T.

AU - Eastman, Jeffrey A.

AU - Fuoss, Paul H.

AU - Fong, Dillon D.

AU - Tischler, Jonathan Z.

AU - Eres, Gyula

AU - Chisholm, Matthew F.

AU - Lee, Ho Nyung

PY - 2012/12/18

Y1 - 2012/12/18

N2 - Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO3/SrTiO3 heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO3 grown at high oxygen pressure dramatically enhances interface abruptness.

AB - Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO3/SrTiO3 heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO3 grown at high oxygen pressure dramatically enhances interface abruptness.

KW - LaAlO /SrTiO

KW - atomic layer engineering

KW - epitaxial strain

KW - perovskite oxide interface

KW - pulsed laser deposition

UR - https://www.scopus.com/pages/publications/84871323772

U2 - 10.1002/adma.201202691

DO - 10.1002/adma.201202691

M3 - Article

C2 - 23034879

AN - SCOPUS:84871323772

SN - 0935-9648

VL - 24

SP - 6423

EP - 6428

JO - Advanced Materials

JF - Advanced Materials

IS - 48

ER -

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

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Keywords

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