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Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
Daming Wei, James H. Edgar, Dayrl P. Briggs, Scott T. Retterer, Bernadeta Srijanto, Dale K. Hensley, Harry M. Meyer
Research output: Contribution to journal › Article › peer-review
6
Scopus
citations