Atomic deuteration of epitaxial many-layer graphene on 4 H - S i C (000 1 ̄)

Alessandro R. Mazza; Anna Miettinen; Matt Conrad; Timothy R. Charlton; Xiaoqing He; Suchi Guha; Guang Bian; Jian Lin; Edward H. Conrad; Paul F. Miceli

doi:10.1116/1.5095961

Atomic deuteration of epitaxial many-layer graphene on 4 H - S i C (000 1 ̄)

Alessandro R. Mazza, Anna Miettinen, Matt Conrad, Timothy R. Charlton, Xiaoqing He, Suchi Guha, Guang Bian, Jian Lin, Edward H. Conrad, Paul F. Miceli

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

From studies of single-layer graphene, the authors find that atomic deuteration indeed does lead to reversible chemisorption. However, they find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/SiC interface. Raman and x-ray diffraction experiments reveal that only a small portion of the graphene is affected, showing no interlayer incorporation of deuterium. However, x-ray reflectivity and cross-sectional transmission electron microscopy demonstrate a change of the buried graphene/SiC interface, which resembles a delamination of graphene from the substrate. In some cases, multiple atomic treatments lead to complete delamination of the graphene film.

Original language	English
Article number	041804
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	37
Issue number	4
DOIs	https://doi.org/10.1116/1.5095961
State	Published - Jul 1 2019
Externally published	Yes

Funding

The authors would like to acknowledge the support of National Science Foundation (NSF) under Grant No. DGE-1069091 as well as support from the Oak Ridge National Lab GO! Fellowship. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Workforce Development for Teachers and Scientists, and Office of Science Graduate Student Research (SCGSR) program. The SCGSR program is administered by the Oak Ridge Institute for Science and Education for the DOE under Contract No. DE-SC0014664.

Funders	Funder number
Office of Science Graduate Student Research
SCGSR
National Science Foundation	DGE-1069091
U.S. Department of Energy
Office of Science
Workforce Development for Teachers and Scientists
Oak Ridge Institute for Science and Education

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title = "Atomic deuteration of epitaxial many-layer graphene on 4 H - S i C (000 1{\= })",

abstract = "From studies of single-layer graphene, the authors find that atomic deuteration indeed does lead to reversible chemisorption. However, they find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/SiC interface. Raman and x-ray diffraction experiments reveal that only a small portion of the graphene is affected, showing no interlayer incorporation of deuterium. However, x-ray reflectivity and cross-sectional transmission electron microscopy demonstrate a change of the buried graphene/SiC interface, which resembles a delamination of graphene from the substrate. In some cases, multiple atomic treatments lead to complete delamination of the graphene film.",

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AU - Mazza, Alessandro R.

AU - Miettinen, Anna

AU - Conrad, Matt

AU - Charlton, Timothy R.

AU - He, Xiaoqing

AU - Guha, Suchi

AU - Bian, Guang

AU - Lin, Jian

AU - Conrad, Edward H.

AU - Miceli, Paul F.

PY - 2019/7/1

Y1 - 2019/7/1

N2 - From studies of single-layer graphene, the authors find that atomic deuteration indeed does lead to reversible chemisorption. However, they find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/SiC interface. Raman and x-ray diffraction experiments reveal that only a small portion of the graphene is affected, showing no interlayer incorporation of deuterium. However, x-ray reflectivity and cross-sectional transmission electron microscopy demonstrate a change of the buried graphene/SiC interface, which resembles a delamination of graphene from the substrate. In some cases, multiple atomic treatments lead to complete delamination of the graphene film.

AB - From studies of single-layer graphene, the authors find that atomic deuteration indeed does lead to reversible chemisorption. However, they find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/SiC interface. Raman and x-ray diffraction experiments reveal that only a small portion of the graphene is affected, showing no interlayer incorporation of deuterium. However, x-ray reflectivity and cross-sectional transmission electron microscopy demonstrate a change of the buried graphene/SiC interface, which resembles a delamination of graphene from the substrate. In some cases, multiple atomic treatments lead to complete delamination of the graphene film.

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Atomic deuteration of epitaxial many-layer graphene on 4 H - S i C (000 1 ̄)

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