Atomic configuration of irradiation-induced planar defects in 3C-SiC

Y. R. Lin; C. Y. Ho; C. Y. Hsieh; M. T. Chang; S. C. Lo; F. R. Chen; J. J. Kai

doi:10.1063/1.4869829

Atomic configuration of irradiation-induced planar defects in 3C-SiC

Y. R. Lin
, C. Y. Ho
, C. Y. Hsieh
, M. T. Chang
, S. C. Lo
, F. R. Chen
, J. J. Kai

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

Original language	English
Article number	121909
Journal	Applied Physics Letters
Volume	104
Issue number	12
DOIs	https://doi.org/10.1063/1.4869829
State	Published - Mar 24 2014
Externally published	Yes

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10.1063/1.4869829

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title = "Atomic configuration of irradiation-induced planar defects in 3C-SiC",

abstract = "The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.",

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AU - Lin, Y. R.

AU - Ho, C. Y.

AU - Hsieh, C. Y.

AU - Chang, M. T.

AU - Lo, S. C.

AU - Chen, F. R.

AU - Kai, J. J.

PY - 2014/3/24

Y1 - 2014/3/24

N2 - The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

AB - The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

UR - https://www.scopus.com/pages/publications/84897409116

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DO - 10.1063/1.4869829

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Atomic configuration of irradiation-induced planar defects in 3C-SiC

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