Abstract
The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.
Original language | English |
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Article number | 121909 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 12 |
DOIs | |
State | Published - Mar 24 2014 |
Externally published | Yes |