Atomic configuration of irradiation-induced planar defects in 3C-SiC

Y. R. Lin; C. Y. Ho; C. Y. Hsieh; M. T. Chang; S. C. Lo; F. R. Chen; J. J. Kai

doi:10.1063/1.4869829

Atomic configuration of irradiation-induced planar defects in 3C-SiC

Y. R. Lin, C. Y. Ho, C. Y. Hsieh, M. T. Chang, S. C. Lo, F. R. Chen, J. J. Kai

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

Original language	English
Article number	121909
Journal	Applied Physics Letters
Volume	104
Issue number	12
DOIs	https://doi.org/10.1063/1.4869829
State	Published - Mar 24 2014
Externally published	Yes

Access to Document

10.1063/1.4869829

Cite this

@article{5fe116af878f4deb91f621db85708924,

title = "Atomic configuration of irradiation-induced planar defects in 3C-SiC",

abstract = "The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.",

author = "Lin, {Y. R.} and Ho, {C. Y.} and Hsieh, {C. Y.} and Chang, {M. T.} and Lo, {S. C.} and Chen, {F. R.} and Kai, {J. J.}",

year = "2014",

month = mar,

day = "24",

doi = "10.1063/1.4869829",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Atomic configuration of irradiation-induced planar defects in 3C-SiC

AU - Lin, Y. R.

AU - Ho, C. Y.

AU - Hsieh, C. Y.

AU - Chang, M. T.

AU - Lo, S. C.

AU - Chen, F. R.

AU - Kai, J. J.

PY - 2014/3/24

Y1 - 2014/3/24

N2 - The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

AB - The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

UR - http://www.scopus.com/inward/record.url?scp=84897409116&partnerID=8YFLogxK

U2 - 10.1063/1.4869829

DO - 10.1063/1.4869829

M3 - Article

AN - SCOPUS:84897409116

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121909

ER -

Atomic configuration of irradiation-induced planar defects in 3C-SiC

Abstract

Access to Document

Other files and links

Fingerprint

Cite this