Atomic and electronic structures of the SrVO3-LaAlO3 interface

Miaofang Chi, Teruyasu Mizoguchi, Lane W. Martin, John P. Bradley, Hidekazu Ikeno, Ramamoorthy Ramesh, Isao Tanaka, Nigel Browning

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Abstract

The atomic and electronic structures at interfaces in thin films are typically different from the bulk and are vitally important in determining the physical properties of thin films. The interface between SrVO3, chosen as a prototype for vanadium-based perovskite materials in this work, and LaAlO3 substrate is investigated by scanning transmission electron microscopy, electron energy-loss spectroscopy, and theoretical multi-electron calculations. Extra electrons have been detected on the interface layer by comparing the energy-loss near-edge structures of V-L3,2 edges to those from the film far from the interface. Monochromated EELS and theoretical calculations for SrVO3, VO2, and V2O 3 support this conclusion. The extra electrons appear to originate from a change in the local bonding configuration of V at the La-O terminated substrate surface as determined by Z-contrast imaging.

Original languageEnglish
Article number046104
JournalJournal of Applied Physics
Volume110
Issue number4
DOIs
StatePublished - Aug 15 2011

Funding

This research was performed in part at the NCEM at LBNL and the SHaRE user facility at ORNL and supported by the DOE under Contract Nos. DE-FG02-03ER46057, DE-AC03-76SF00098, and DE-AC02-05CH1-1231. T.M. was supported by Grant-in-Aid for Scientific Research on Priority Areas and Young Scientists (A) 22686059 from MEXT of Japan, and the special fund of (5504850103).

FundersFunder number
NCEM
U.S. Department of EnergyDE-FG02-03ER46057, DE-AC02-05CH1-1231, DE-AC03-76SF00098
Oak Ridge National Laboratory
Japan Society for the Promotion of Science19053001, 22686059
Ministry of Education, Culture, Sports, Science and Technology5504850103

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