Assessment of laser-induced thermal load on silicon nanostructures based on ion desorption yields

Experimental assessment of the thermal load induced by fast laser pulses on micro- and nanostructures through IR imaging is currently too slow and lacks the spatial resolution to be useful. In this paper, we introduce a method based on measuring the laser-induced yields of ions to compare the thermal loads on nanofabricated silicon structures, when exposed to nanosecond laser pulses. The laser fluences at which the ion yields of, for example, sodiated and potassiated peptides ions are equal for two different structures correspond to equivalent thermal loads. Using alkalinated peptides is a convenient choice because the corresponding ion intensities are easily measured up to the melting point of silicon. As an example, we compare the nanosecond laser heating of silicon nanopost arrays with diverse post diameters and periodicities. Assessment of the thermal load through ion yield measurements can also be used to verify model assumptions for heat transport regimes in nanostructures.