Abstract
Chemical solution processing of Gd2Zr2O7 (GZO) thin films via sol-gel and metalorganic decomposition (MOD) precursor routes have been studied on textured Ni-based tape substrates. Even though films processed by both techniques showed similar property characteristics, the MOD-derived samples developed a high degree of texture alignment at significantly lower temperatures. Both precursor chemistries resulted in exceptionally dense, pore-free, and smooth microstructures, reflected in the cross-sectional and plan-view high-resolution scanning and transmission electron microscopy studies. On the MOD GZO buffered Ni-3at.% W (Ni-W) substrates with additional CeO2/YSZ sputtered over layers, a 0.8-μm-thick YBa2Cu3O7-δ (YBCO) film, grown by an ex situ metalorganic trifluoroacetate precursor method, yielded critical current, Ic (77 K, self-field), of 100 A/cm width. Furthermore, using pulsed-laser deposited YBCO films, a zero-field superconducting critical current density, Jc (77 K), of 1 × 106 A/cm2 was demonstrated on an all-solution, simplified CeO2(MOD)/GZO(MOD)/Ni-W architecture. The present study establishes GZO buffers as a candidate material for low-cost, all-solution coated conductor fabrication.
Original language | English |
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Pages (from-to) | 2988-2996 |
Number of pages | 9 |
Journal | Journal of Materials Research |
Volume | 20 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2005 |
Funding
This work was supported by the United States Department of Energy (USDOE), Office of Basic Energy Sciences and the Office of Electrical Transmission and Distribution. The research was performed at the Oak Ridge National Laboratory, managed by U.T.-Battelle, LLC for the USDOE under Contract No. DE-AC05-00OR22725.