ArF laser photochemical deposition of amorphous silicon from disilane: Spectroscopic studies and comparison with thermal CVD

D. Eres; D. B. Geohegan; D. H. Lowndes; D. N. Mashburn

doi:10.1016/0169-4332(89)90900-8

ArF laser photochemical deposition of amorphous silicon from disilane: Spectroscopic studies and comparison with thermal CVD

D. Eres, D. B. Geohegan, D. H. Lowndes, D. N. Mashburn

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Abstract

Photodissociation of Si₂H₆ at 193 nm under conditions optimized for deposition of hydrogenated amorphous silicon (a-Si:H) films produces electronically excited SiH and SiH₂ fragments which were detected by emission spectroscopy. Various gases such as He, H₂, Ar and N₂ were used as carrier gases in a flowing-gas type deposition chamber in order to investigate whether there was a correlation between the fluorescence intensity from photodissociation products and the a-Si:H film deposition rate. It was found (1) that the rate-controlling process in the laser-induced a-Si:H film deposition is a thermally activated surface process, and (2) the general features of the relationship between the deposition variablees (substrate temperature, deposition rate) and a-Si:H film optical properties could be described by a model based on the probability of adatom transfer to a lower energy configuration during film deposition.

Original language	English
Pages (from-to)	70-80
Number of pages	11
Journal	Applied Surface Science
Volume	36
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(89)90900-8
State	Published - 1989

Funding

In general, the deposition process can be initiated by creating a high concentration of nonequilibr/um spec/es Sill n in the gas-phase by fragme~zta-tion of Si-be~afing molecules via some energy input (pyrolysis, photolysis, plasma decomposition, etc.). Film deposition occurs because of the pro- Research sponsored by the Division of Materials Science, US Department of contract DE-AC05-~OR21400 with Martin Marietta Energy Systems, lac.

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title = "ArF laser photochemical deposition of amorphous silicon from disilane: Spectroscopic studies and comparison with thermal CVD",

abstract = "Photodissociation of Si2H6 at 193 nm under conditions optimized for deposition of hydrogenated amorphous silicon (a-Si:H) films produces electronically excited SiH and SiH2 fragments which were detected by emission spectroscopy. Various gases such as He, H2, Ar and N2 were used as carrier gases in a flowing-gas type deposition chamber in order to investigate whether there was a correlation between the fluorescence intensity from photodissociation products and the a-Si:H film deposition rate. It was found (1) that the rate-controlling process in the laser-induced a-Si:H film deposition is a thermally activated surface process, and (2) the general features of the relationship between the deposition variablees (substrate temperature, deposition rate) and a-Si:H film optical properties could be described by a model based on the probability of adatom transfer to a lower energy configuration during film deposition.",

author = "D. Eres and Geohegan, \{D. B.\} and Lowndes, \{D. H.\} and Mashburn, \{D. N.\}",

year = "1989",

doi = "10.1016/0169-4332(89)90900-8",

language = "English",

volume = "36",

pages = "70--80",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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T1 - ArF laser photochemical deposition of amorphous silicon from disilane

T2 - Spectroscopic studies and comparison with thermal CVD

AU - Eres, D.

AU - Geohegan, D. B.

AU - Lowndes, D. H.

AU - Mashburn, D. N.

PY - 1989

Y1 - 1989

N2 - Photodissociation of Si2H6 at 193 nm under conditions optimized for deposition of hydrogenated amorphous silicon (a-Si:H) films produces electronically excited SiH and SiH2 fragments which were detected by emission spectroscopy. Various gases such as He, H2, Ar and N2 were used as carrier gases in a flowing-gas type deposition chamber in order to investigate whether there was a correlation between the fluorescence intensity from photodissociation products and the a-Si:H film deposition rate. It was found (1) that the rate-controlling process in the laser-induced a-Si:H film deposition is a thermally activated surface process, and (2) the general features of the relationship between the deposition variablees (substrate temperature, deposition rate) and a-Si:H film optical properties could be described by a model based on the probability of adatom transfer to a lower energy configuration during film deposition.

AB - Photodissociation of Si2H6 at 193 nm under conditions optimized for deposition of hydrogenated amorphous silicon (a-Si:H) films produces electronically excited SiH and SiH2 fragments which were detected by emission spectroscopy. Various gases such as He, H2, Ar and N2 were used as carrier gases in a flowing-gas type deposition chamber in order to investigate whether there was a correlation between the fluorescence intensity from photodissociation products and the a-Si:H film deposition rate. It was found (1) that the rate-controlling process in the laser-induced a-Si:H film deposition is a thermally activated surface process, and (2) the general features of the relationship between the deposition variablees (substrate temperature, deposition rate) and a-Si:H film optical properties could be described by a model based on the probability of adatom transfer to a lower energy configuration during film deposition.

UR - https://www.scopus.com/pages/publications/0024301321

U2 - 10.1016/0169-4332(89)90900-8

DO - 10.1016/0169-4332(89)90900-8

M3 - Article

AN - SCOPUS:0024301321

SN - 0169-4332

VL - 36

SP - 70

EP - 80

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

ArF laser photochemical deposition of amorphous silicon from disilane: Spectroscopic studies and comparison with thermal CVD

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