ArF laser photochemical deposition of amorphous silicon from disilane: Spectroscopic studies and comparison with thermal CVD

D. Eres, D. B. Geohegan, D. H. Lowndes, D. N. Mashburn

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Photodissociation of Si2H6 at 193 nm under conditions optimized for deposition of hydrogenated amorphous silicon (a-Si:H) films produces electronically excited SiH and SiH2 fragments which were detected by emission spectroscopy. Various gases such as He, H2, Ar and N2 were used as carrier gases in a flowing-gas type deposition chamber in order to investigate whether there was a correlation between the fluorescence intensity from photodissociation products and the a-Si:H film deposition rate. It was found (1) that the rate-controlling process in the laser-induced a-Si:H film deposition is a thermally activated surface process, and (2) the general features of the relationship between the deposition variablees (substrate temperature, deposition rate) and a-Si:H film optical properties could be described by a model based on the probability of adatom transfer to a lower energy configuration during film deposition.

Original languageEnglish
Pages (from-to)70-80
Number of pages11
JournalApplied Surface Science
Volume36
Issue number1-4
DOIs
StatePublished - 1989

Funding

In general, the deposition process can be initiated by creating a high concentration of nonequilibr/um spec/es Sill n in the gas-phase by fragme~zta-tion of Si-be~afing molecules via some energy input (pyrolysis, photolysis, plasma decomposition, etc.). Film deposition occurs because of the pro- Research sponsored by the Division of Materials Science, US Department of contract DE-AC05-~OR21400 with Martin Marietta Energy Systems, lac.

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